Abstract Reducing the switching energy of ferroelectric thin films remains an important goal in the pursuit of ultralow-power ferroelectric memory and logic devices. Here, we elucidate the fundamental role of lattice dynamics in ferroelectric switching by studying both freestanding bismuth ferrite (BiFeO 3 ) membranes and films clamped to a substrate. We observe a distinct evolution of the ferroelectric domain pattern, from striped, 71° ferroelastic domains (spacing of ~100 nm) in clamped BiFeO 3 films, to large (10’s of micrometers) 180° domains in freestanding films. By removing the constraints imposed by mechanical clamping from the substrate, we can realize a ~40% reduction of the switching voltage and a consequent ~60% improvement in the switching speed. Our findings highlight the importance of a dynamic clamping process occurring during switching, which impacts strain, ferroelectric, and ferrodistortive order parameters and plays a critical role in setting the energetics and dynamics of ferroelectric switching.
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Giant tuning of ferroelectricity in single crystals by thickness engineering
Thickness effect and mechanical tuning behavior such as strain engineering in thin-film ferroelectrics have been extensively studied and widely used to tailor the ferroelectric properties. However, this is never the case in freestanding single crystals, and conclusions from thin films cannot be duplicated because of the differences in the nature and boundary conditions of the thin-film and freestanding single-crystal ferroelectrics. Here, using in situ biasing transmission electron microscopy, we studied the thickness-dependent domain switching behavior and predicted the trend of ferroelectricity in nanoscale materials induced by surface strain. We discovered that sample thickness plays a critical role in tailoring the domain switching behavior and ferroelectric properties of single-crystal ferroelectrics, arising from the huge surface strain and the resulting surface reconstruction. Our results provide important insights in tuning polarization/domain of single-crystal ferroelectric via sample thickness engineering.
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- Award ID(s):
- 1744213
- NSF-PAR ID:
- 10210651
- Date Published:
- Journal Name:
- Science Advances
- Volume:
- 6
- Issue:
- 42
- ISSN:
- 2375-2548
- Page Range / eLocation ID:
- eabc7156
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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Abstract Ferroelectric nanotubes offer intriguing opportunities for stabilizing exotic polarization domains and achieving new or enhanced functionalities by tailoring the complex interplay among the geometry, surface effects, crystal symmetry, and more. Here, phase‐field simulations to predict the room‐temperature equilibrium polarization domain structure in (001)pcPbZr0.52Ti0.48O3(PZT) nanotubes are used (pseudocubic (pc)). The simulations incorporate the influence of surface‐tension‐induced strains, which have been ignored in existing computational studies. It is found that (001)pcPZT nanotubes can host a unique class of topological polarization domain structures comprising non‐planar flux‐closures and anti‐flux‐closures that are inaccessible with ferroelectrics of planar geometry (e.g., thin‐films, nanodots). It is shown that surface‐tension‐induced strain is significantly enhanced in thin‐walled nanotubes and thereby can lead to noticeable modulation of the flux closures. Domain stability map as a function of the nanotube wall thickness and height is established. The results provide a basis for geometrical engineering of domain structures and associated functional (e.g., piezoelectric, electrocaloric) responses in ferroelectric nanotubes.
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The research on two-dimensional (2D) van der Waals ferroelectrics has grown substantially in the last decade. These layered materials differ from conventional thin-film oxide ferroelectrics in that the surface and interface are free from dangling bonds. Some may also possess uncommon properties, such as bandgap tunability, mechanical flexibility, and high carrier mobility, which are desirable for applications in nanoelectronics and optoelectronics. This Tutorial starts by reviewing the theoretical tools in 2D ferroelectric studies, followed by discussing the material synthesis and sample characterization. Several prototypical electronic devices with innovative functionalities will be highlighted. Readers can use this article to obtain a basic understanding of the current status, challenges, and future prospects of 2D ferroelectric materials.
- Free Publicly Accessible Full Text
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Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.1126/sciadv.abc7156
