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Title: Study of patterned GaAsSbN nanowires using sigmoidal model
Abstract This study presents the first report on patterned nanowires (NWs) of dilute nitride GaAsSbN on p-Si (111) substrates by self-catalyzed plasma-assisted molecular beam epitaxy. Patterned NW array with GaAsSbN of Sb composition of 3% as a stem provided the best yield of vertical NWs. Large bandgap tuning of ~ 75 meV, as ascertained from 4 K photoluminescence (PL), over a pitch length variation of 200–1200 nm has been demonstrated. Pitch-dependent axial and radial growth rates show a logistic sigmoidal growth trend different from those commonly observed in other patterned non-nitride III–V NWs. The sigmoidal fitting provides further insight into the PL spectral shift arising from differences in Sb and N incorporation from pitch induced variation in secondary fluxes. Results indicate that sigmoidal fitting can be a potent tool for designing patterned NW arrays of optimal pitch length for dilute nitrides and other highly mismatched alloys and heterostructures.  more » « less
Award ID(s):
1649517
PAR ID:
10215186
Author(s) / Creator(s):
; ; ; ; ; ; ;
Publisher / Repository:
Nature Publishing Group
Date Published:
Journal Name:
Scientific Reports
Volume:
11
Issue:
1
ISSN:
2045-2322
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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