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1. Modeling and Characterization of 10-kV SiC MOSFET Modules for Medium-Voltage Distribution Systems

   https://doi.org/10.1109/PEDG48541.2020.9244411  

   Oggier, German G. ; Jimenez, Roderick Gomez ; Zhao, Yue ; Balda, Juan Carlos ( September 2020 , 2020 IEEE 11th International Symposium on Power Electronics for Distributed Generation Systems (PEDG))

   This work presents the modeling and characterization of 10-kV SiC MOSFET modules used for medium-voltage distribution system applications. In addition to the nonlinear junction capacitances of the devices, the model includes the non-linearities present at steady-state like transfer characteristics and the behavior in the Ohmic region, which allows to increase the accuracy of the SiC MOSFET model. Furthermore, the parasitic inductances in the circuit (such as the source inductance shared by the power stage and driver loop and the drain inductance) are considered in the model since it has been demonstrated previously that it influences the total losses. By using the proposed model, the calculated voltage and current transients show a good match with the experimental results. 

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2. Subcircuit Based Modelling of SiC MOSFET in MATLAB/SIMULINK

   https://doi.org/10.1109/ECCE-Asia49820.2021.9479130  

   Wei, Yuqi ; Mantooth, Alan ( May 2021 , IEEE 12th Energy Conversion Congress & Exposition - Asia (ECCE-Asia))

   Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) has been widely used in numerous industrial applications owning to their characteristics of low on-state resistance, high thermal conductivity, and high operating temperature. To fully utilize the potential of SiC MOSFET, an accurate device model is desired to evaluate the device performance before fabrication. In this article, an accurate subcircuit based model is used to describe the SiC MOSFET dynamic performance. In the model, the non-linearity of device parasitic capacitance is considered by extracting capacitance values under multiple drain-source voltage values from datasheet. All the possible circuit parasitic inductances are extracted by using ANSYS Q3D. To reduce the model complexity, the threshold voltage based model for MOSFET is adopted. Finally, the subcircuit based model is implemented in MATLAB/SIMULINK. The developed model has the advantages of high accuracy, convenient, fast execution time. The model would be a convenient tool to evaluate the device performance and help understanding the experiment phenomena. To validate the accuracy of the developed model, double pulse test (DPT) results of a 1.2 kV SiC MOSFET (ROHM) from both simulation and experiment are compared, the results shown that the developed model is an effective evaluation tool for the SiC MOSFET performance. 

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3. A High-Accuracy, Low-Order Thermal Model of SiC MOSFET Power Modules Extracted from Finite Element Analysis via Model Order Reduction

   https://doi.org/10.1109/ECCE.2019.8912839  

   Entzminger, Cameron ; Qiao, Wei ; Qu, Liyan ; Hudgins, Jerry L. ( September 2019 , 2019 IEEE Energy Conversion Congress and Exposition (ECCE))

   Silicon carbide (SiC) MOSFET power modules are being used for high power applications because of their superior thermal characteristics and high blocking voltage capabilities over traditional silicon power modules. This paper explores modeling the thermal process of a SiC MOSFET power module through a high-order finite element analysis (FEA) based thermal model and then reducing the order of the FEA thermal model using a Krylov subspace method. The low-order thermal model has a significantly reduced computation cost compared to the FEA model while preserving the accuracy of the model. The proposed method is applied to generate low-order thermal models for a SiC MOSFET, which are validated by computer simulations with respect to the FEA thermal model. 

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4. A Wireless Power Transfer based Gate Driver Design for Medium Voltage SiC MOSFETs

   https://doi.org/10.1109/IFEEC53238.2021.9661739  

   Wei, Yuqi ; Du, Liyang ; Du, Xia ; Machireddy, Venkata Samhitha ; Mantooth, Alan ( November 2021 , IEEE International Future Energy Electronics Conference (IFEEC))

   Wide band gap (WBG) devices have been widely adopted in numerous industrial applications. In medium voltage applications, multi-level converters are necessary to reduce the voltage stress on power devices, which increases the system control complexity and reduces power density and reliability. High voltage silicon carbide (SiC) MOSFET enables the medium voltage applications with less voltage level, simple control strategy and high power density. Nevertheless, great challenges have been posed on the gate driver design for high voltage SiC MOSFET. Wireless power transfer (WPT) can achieve power conversion with large airgap, which can satisfy the system isolation requirement. Thus, in this article, a WPT based gate driver is designed for the medium voltage SiC MOSFET. The coil is optimized by considering voltage isolation, coupling capacitance, size, and efficiency. Experimental prototype was built and tested to validate the effectiveness of the proposed WPT based gate driver. 

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5. Comparative Analysis of Silicon Carbide and Silicon Switching Devices for Multilevel Cascaded H-Bridge Inverter Application with Battery Energy storage

   https://doi.org/10.1109/PEDG.2018.8447775  

   Mordi, Kenneth ; Mhiesan, Haider ; Umuhoza, Janviere ; Hossain, Md Maksudul ; Farnell, Chris ; Mantooth, H. Alan ( June 2018 , 2018 9th IEEE International Symposium on Power Electronics for Distributed Generation Systems (PEDG))

   This paper investigates the use of power semiconductor devices in a nine - level cascaded H-bridge (CHB) multilevel inverter topology with an integrated battery energy storage system (BESS) for a 13.8kV medium voltage distribution system. In this topology, the bulky conventional step-up 60 Hz transformer is not used. The purpose of this study is to analyze the use of SiC MOSFET and Si IGBT devices in the inverter system to evaluate their respective performances. SiC MOSFET and Si IGBT switching devices are modeled and characterized using Saber® modeling software. The switching losses, thermal performance, and efficiency of the inverter system are investigated, and measurements are obtained from the simulation. Saber® provides a good capability for characterizing semiconductor models in the real world, with great features of computation. A three-phase SiC power MOSFET-based multilevel CHB inverter prototype is presented for experimental verification. In the investigation, better performances of SiC MOSFET devices are recorded. SiC devices demonstrate promising performance at different switching frequency and temperature ranges. 

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