Exploiting In-Memory Data Patterns for Performance Improvement on Crossbar Resistive Memory
- Publication Date:
- NSF-PAR ID:
- 10217070
- Journal Name:
- IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
- Volume:
- 39
- Issue:
- 10
- Page Range or eLocation-ID:
- 2347 to 2360
- ISSN:
- 0278-0070
- Sponsoring Org:
- National Science Foundation
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