Wen, Jiaxuan, Chaganti, V. R., Truttmann, Tristan K., Liu, Fengdeng, Jalan, Bharat, and Koester, Steven J. SrSnO₃ Metal-Semiconductor Field-Effect Transistor With GHz Operation. Retrieved from https://par.nsf.gov/biblio/10218437. IEEE Electron Device Letters 42.1 Web. doi:10.1109/LED.2020.3040417.

Wen, Jiaxuan, Chaganti, V. R., Truttmann, Tristan K., Liu, Fengdeng, Jalan, Bharat, & Koester, Steven J. SrSnO₃ Metal-Semiconductor Field-Effect Transistor With GHz Operation. IEEE Electron Device Letters, 42 (1). Retrieved from https://par.nsf.gov/biblio/10218437. https://doi.org/10.1109/LED.2020.3040417

Wen, Jiaxuan, Chaganti, V. R., Truttmann, Tristan K., Liu, Fengdeng, Jalan, Bharat, and Koester, Steven J. "SrSnO₃ Metal-Semiconductor Field-Effect Transistor With GHz Operation". IEEE Electron Device Letters 42 (1). Country unknown/Code not available. https://doi.org/10.1109/LED.2020.3040417. https://par.nsf.gov/biblio/10218437.

@article{osti_10218437,
place = {Country unknown/Code not available}, title = {SrSnO₃ Metal-Semiconductor Field-Effect Transistor With GHz Operation}, url = {https://par.nsf.gov/biblio/10218437}, DOI = {10.1109/LED.2020.3040417}, abstractNote = {}, journal = {IEEE Electron Device Letters}, volume = {42}, number = {1}, author = {Wen, Jiaxuan and Chaganti, V. R. and Truttmann, Tristan K. and Liu, Fengdeng and Jalan, Bharat and Koester, Steven J.}, editor = {null} }