Hayden Breckenridge, M., Guo, Qiang, Klump, Andrew, Sarkar, Biplab, Guan, Yan, Tweedie, James, Kirste, Ronny, Mita, Seiji, Reddy, Pramod, Collazo, Ramón, and Sitar, Zlatko. Shallow Si donor in ion-implanted homoepitaxial AlN. Retrieved from https://par.nsf.gov/biblio/10218652. Applied Physics Letters 116.17 Web. doi:10.1063/1.5144080.

Hayden Breckenridge, M., Guo, Qiang, Klump, Andrew, Sarkar, Biplab, Guan, Yan, Tweedie, James, Kirste, Ronny, Mita, Seiji, Reddy, Pramod, Collazo, Ramón, & Sitar, Zlatko. Shallow Si donor in ion-implanted homoepitaxial AlN. Applied Physics Letters, 116 (17). Retrieved from https://par.nsf.gov/biblio/10218652. https://doi.org/10.1063/1.5144080

Hayden Breckenridge, M., Guo, Qiang, Klump, Andrew, Sarkar, Biplab, Guan, Yan, Tweedie, James, Kirste, Ronny, Mita, Seiji, Reddy, Pramod, Collazo, Ramón, and Sitar, Zlatko. "Shallow Si donor in ion-implanted homoepitaxial AlN". Applied Physics Letters 116 (17). Country unknown/Code not available. https://doi.org/10.1063/1.5144080. https://par.nsf.gov/biblio/10218652.

@article{osti_10218652,
place = {Country unknown/Code not available}, title = {Shallow Si donor in ion-implanted homoepitaxial AlN}, url = {https://par.nsf.gov/biblio/10218652}, DOI = {10.1063/1.5144080}, abstractNote = {}, journal = {Applied Physics Letters}, volume = {116}, number = {17}, author = {Hayden Breckenridge, M. and Guo, Qiang and Klump, Andrew and Sarkar, Biplab and Guan, Yan and Tweedie, James and Kirste, Ronny and Mita, Seiji and Reddy, Pramod and Collazo, Ramón and Sitar, Zlatko}, editor = {null} }