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Title: Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping
Award ID(s):
1916800 1653383 1508854
NSF-PAR ID:
10218654
Author(s) / Creator(s):
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Date Published:
Journal Name:
Applied Physics Letters
Volume:
118
Issue:
4
ISSN:
0003-6951
Page Range / eLocation ID:
042102
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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