Washiyama, Shun, Mirrielees, Kelsey J., Bagheri, Pegah, Baker, Jonathon N., Kim, Ji-Hyun, Guo, Qiang, Kirste, Ronny, Guan, Yan, Breckenridge, M. Hayden, Klump, Andrew J., Reddy, Pramod, Mita, Seiji, Irving, Douglas L., Collazo, Ramón, and Sitar, Zlatko.
"Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping". Applied Physics Letters 118 (4). Country unknown/Code not available. https://doi.org/10.1063/5.0035957.https://par.nsf.gov/biblio/10218654.
@article{osti_10218654,
place = {Country unknown/Code not available},
title = {Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping},
url = {https://par.nsf.gov/biblio/10218654},
DOI = {10.1063/5.0035957},
abstractNote = {},
journal = {Applied Physics Letters},
volume = {118},
number = {4},
author = {Washiyama, Shun and Mirrielees, Kelsey J. and Bagheri, Pegah and Baker, Jonathon N. and Kim, Ji-Hyun and Guo, Qiang and Kirste, Ronny and Guan, Yan and Breckenridge, M. Hayden and Klump, Andrew J. and Reddy, Pramod and Mita, Seiji and Irving, Douglas L. and Collazo, Ramón and Sitar, Zlatko},
editor = {null}
}
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