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Abstract Efficient doping of polymer semiconductors is required for high conductivity and efficient thermoelectric performance. Lewis acids, e.g., B(C6F5)3, have been widely employed as dopants, but the mechanism is not fully understood. 1:1 “Wheland type” or zwitterionic complexes of B(C6F5)3are created with small conjugated molecules 3,6‐bis(5‐(7‐(5‐methylthiophen‐2‐yl)‐2,3‐dihydrothieno[3,4‐b][1,4]dioxin‐5‐yl)thiophen‐2‐yl)‐2,5‐dioctyl‐2,5‐dihydropyrrolo[3,4‐c]pyrrole‐1,4‐dione [oligo_DPP(EDOT)2] and 3,6‐bis(5''‐methyl‐[2,2':5',2''‐terthiophen]‐5‐yl)‐2,5‐dioctyl‐2,5‐dihydropyrrolo[3,4‐c]pyrrole‐1,4‐dione [oligo_DPP(Th)2]. Using a wide variety of experimental and computational approaches, the doping ability of these Wheland Complexes with B(C6F5)3are characterized for five novel diketopyrrolopyrrole‐ethylenedioxythiophene (DPP‐EDOT)‐based conjugated polymers. The electrical properties are a strong function of the specific conjugated molecule constituting the adduct, rather than acidic protons generated via hydrolysis of B(C6F5)3, serving as the oxidant. It is highly probable that certain repeat units/segments form adduct structures inp‐type conjugated polymers which act as intermediates for conjugated polymer doping. Electronic and optical properties are consistent with the increase in hole‐donating ability of polymers with their cumulative donor strengths. The doped film of polymer (DPP(EDOT)2‐(EDOT)2) exhibits exceptionally good thermal and air‐storage stability. The highest conductivities, ≈300 and ≈200 S cm−1, are achieved for DPP(EDOT)2‐(EDOT)2doped with B(C6F5)3and its Wheland complexes.
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Surface Modification of Black Phosphorus with Group 13 Lewis Acids for Ambient Protection and Electronic Tuning
Abstract Herein we introduce a facile, solution‐phase protocol to modify the Lewis basic surface of few‐layer black phosphorus (bP) and demonstrate its effectiveness at providing ambient stability and tuning of electronic properties. Commercially available group 13 Lewis acids that range in electrophilicity, steric bulk, and Pearson hard/soft‐ness are evaluated. The nature of the interaction between the Lewis acids and thebP lattice is investigated using a range of microscopic (optical, atomic force, scanning electron) and spectroscopic (energy dispersive, X‐ray photoelectron) methods. Al and Ga halides are most effective at preventing ambient degradation ofbP (>84 h for AlBr3), and the resulting field‐effect transistors show excellentIVcharacteristics, photocurrent, and current stability, and are significantly p‐doped. This protocol, chemically matched tobP and compatible with device fabrication, opens a path for deterministic and persistent tuning of the electronic properties inbP.
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- Award ID(s):
- 1719797
- PAR ID:
- 10220731
- Publisher / Repository:
- Wiley Blackwell (John Wiley & Sons)
- Date Published:
- Journal Name:
- Angewandte Chemie International Edition
- Volume:
- 60
- Issue:
- 15
- ISSN:
- 1433-7851
- Format(s):
- Medium: X Size: p. 8329-8336
- Size(s):
- p. 8329-8336
- Sponsoring Org:
- National Science Foundation
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