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Title: High-power narrow spectrum GaSb-based DBR lasers emitting near 2.1  µm

Stable high-power narrow-linewidth operation of the 2.05–2.1 µm GaSb-based diode lasers was achieved by utilizing the sixth-order surface-etched distributed Bragg reflector (DBR) mirrors. The DBR multimode devices with 100 µm wide ridge waveguides generated∼<#comment/>850mWin the continuous wave (CW) regime at 20°C. The device CW output power was limited by thermal rollover. The laser emission spectrum was defined by Bragg reflector reflectivity at all operating currents in a wide temperature range. The devices operated at DBR line with detuning from gain peak exceeding 10 meV.

 
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Award ID(s):
1708873 1707317
NSF-PAR ID:
10221886
Author(s) / Creator(s):
; ; ; ; ;
Publisher / Repository:
Optical Society of America
Date Published:
Journal Name:
Optics Letters
Volume:
46
Issue:
8
ISSN:
0146-9592; OPLEDP
Page Range / eLocation ID:
Article No. 1967
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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