Lee, Kevin, Bharadwaj, Shyam, Shao, Yu-Tsun, van Deurzen, Len, Protasenko, Vladimir, Muller, David A., Xing, Huili Grace, and Jena, Debdeep. Light-emitting diodes with AlN polarization-induced buried tunnel junctions: A second look. Retrieved from https://par.nsf.gov/biblio/10226552. Applied Physics Letters 117.6 Web. doi:10.1063/5.0015097.

Lee, Kevin, Bharadwaj, Shyam, Shao, Yu-Tsun, van Deurzen, Len, Protasenko, Vladimir, Muller, David A., Xing, Huili Grace, & Jena, Debdeep. Light-emitting diodes with AlN polarization-induced buried tunnel junctions: A second look. Applied Physics Letters, 117 (6). Retrieved from https://par.nsf.gov/biblio/10226552. https://doi.org/10.1063/5.0015097

Lee, Kevin, Bharadwaj, Shyam, Shao, Yu-Tsun, van Deurzen, Len, Protasenko, Vladimir, Muller, David A., Xing, Huili Grace, and Jena, Debdeep. "Light-emitting diodes with AlN polarization-induced buried tunnel junctions: A second look". Applied Physics Letters 117 (6). Country unknown/Code not available. https://doi.org/10.1063/5.0015097. https://par.nsf.gov/biblio/10226552.

@article{osti_10226552,
place = {Country unknown/Code not available}, title = {Light-emitting diodes with AlN polarization-induced buried tunnel junctions: A second look}, url = {https://par.nsf.gov/biblio/10226552}, DOI = {10.1063/5.0015097}, abstractNote = {}, journal = {Applied Physics Letters}, volume = {117}, number = {6}, author = {Lee, Kevin and Bharadwaj, Shyam and Shao, Yu-Tsun and van Deurzen, Len and Protasenko, Vladimir and Muller, David A. and Xing, Huili Grace and Jena, Debdeep}, editor = {null} }