Previous high-resolution angle-resolved photoemission (ARPES) studies of URu2Si2have characterized the temperature-dependent behavior of narrow-band states close to the Fermi level (
Electrical resistivity measurements were performed on single crystals of URu2–
- Award ID(s):
- 1810310
- NSF-PAR ID:
- 10227627
- Publisher / Repository:
- Proceedings of the National Academy of Sciences
- Date Published:
- Journal Name:
- Proceedings of the National Academy of Sciences
- Volume:
- 118
- Issue:
- 20
- ISSN:
- 0027-8424
- Page Range / eLocation ID:
- Article No. e2026591118
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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Global perspectives of the bulk electronic structure of URu 2 Si 2 from angle-resolved photoemission
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