Enhanced Threshold Voltage Stability in ZnO Thin-Film-Transistors by Excess of Oxygen in Atomic Layer Deposited Al 2 O 3
- Award ID(s):
- 1653343
- NSF-PAR ID:
- 10233165
- Date Published:
- Journal Name:
- 2020 IEEE International Reliability Physics Symposium (IRPS)
- Page Range / eLocation ID:
- 1 to 5
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation