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Title: Enhanced Threshold Voltage Stability in ZnO Thin-Film-Transistors by Excess of Oxygen in Atomic Layer Deposited Al 2 O 3
Award ID(s):
1653343
NSF-PAR ID:
10233165
Author(s) / Creator(s):
; ; ; ;
Date Published:
Journal Name:
2020 IEEE International Reliability Physics Symposium (IRPS)
Page Range / eLocation ID:
1 to 5
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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