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Title: The dependence of the emission from MQWs on the indium content in the underlying InGaN templates: experimental and modeling results
Award ID(s):
1833323
NSF-PAR ID:
10252385
Author(s) / Creator(s):
; ;
Date Published:
Journal Name:
Semiconductor Science and Technology
Volume:
36
Issue:
3
ISSN:
0268-1242
Page Range / eLocation ID:
035018
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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