The dependence of the emission from MQWs on the indium content in the underlying InGaN templates: experimental and modeling results
- Award ID(s):
- 1833323
- NSF-PAR ID:
- 10252385
- Date Published:
- Journal Name:
- Semiconductor Science and Technology
- Volume:
- 36
- Issue:
- 3
- ISSN:
- 0268-1242
- Page Range / eLocation ID:
- 035018
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
No document suggestions found