skip to main content

Attention:

The NSF Public Access Repository (PAR) system and access will be unavailable from 11:00 PM ET on Friday, December 13 until 2:00 AM ET on Saturday, December 14 due to maintenance. We apologize for the inconvenience.


Title: How good are 2D transistors? An application-specific benchmarking study
Award ID(s):
1915814
PAR ID:
10256893
Author(s) / Creator(s):
; ;
Date Published:
Journal Name:
Applied Physics Letters
Volume:
118
Issue:
3
ISSN:
0003-6951
Page Range / eLocation ID:
030501
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
More Like this
No document suggestions found