Role of tantalum concentration, processing temperature, and strain-rate on the mechanical behavior of copper-tantalum alloys

Srinivasan, S.; Sharma, S.; Turnage, S.; Hornbuckle, B.C.; Kale, C.; Darling, K.A.; Solanki, K.

doi:10.1016/j.actamat.2021.116706

Abstract

The interconnect half‐pitch size will reach ≈20 nm in the coming sub‐5 nm technology node. Meanwhile, the TaN/Ta (barrier/liner) bilayer stack has to be >4 nm to ensure acceptable liner and diffusion barrier properties. Since TaN/Ta occupy a significant portion of the interconnect cross‐section and they are much more resistive than Cu, the effective conductance of an ultrascaled interconnect will be compromised by the thick bilayer. Therefore, 2D layered materials have been explored as diffusion barrier alternatives. However, many of the proposed 2D barriers are prepared at too high temperatures to be compatible with the back‐end‐of‐line (BEOL) technology. In addition, as important as the diffusion barrier properties, the liner properties of 2D materials must be evaluated, which has not yet been pursued. Here, a 2D layered tantalum sulfide (TaS_x) with ≈1.5 nm thickness is developed to replace the conventional TaN/Ta bilayer. The TaS_xultrathin film is industry‐friendly, BEOL‐compatible, and can be directly prepared on dielectrics. The results show superior barrier/liner properties of TaS_xcompared to the TaN/Ta bilayer. This single‐stack material, serving as both a liner and a barrier, will enable continued scaling of interconnects beyond 5 nm node.

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