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Title: Enhanced photocurrent response speed in charge-density-wave phase of TiSe 2 -metal junctions
Group IVB transition metal dichalcogenides (TMDCs) have attracted significant attention due to their predicted high charge carrier mobility, large sheet current density, and enhanced thermoelectric power. Here, we investigate the electrical and optoelectronic properties of few-layer titanium diselenide (TiSe 2 )-metal junctions through spatial-, wavelength-, temperature-, power- and temporal-dependent scanning photocurrent measurements. Strong photocurrent responses have been detected at TiSe 2 -metal junctions, which is likely attributed to both photovoltaic and photothermoelectric effects. A fast response time of 31 μs has been achieved, which is two orders of magnitude better than HfSe 2 based devices. More importantly, our experimental results reveal a significant enhancement in the response speed upon cooling to the charge-density-wave (CDW) phase transition temperature ( T CDW = 206 K), which may result from dramatic reduction in carrier scattering that occurs as a result of the switching between the normal and CDW phases of TiSe 2 . Additionally, the photoresponsivity at 145 K is up to an order of magnitude higher than that obtained at room temperature. These fundamental studies not only offer insight for the photocurrent generation mechanisms of group IVB TMDC materials, but also provide a route to engineering future temperature-dependent, two-dimensional, fast electronic and more » optoelectronic devices. « less
Award ID(s):
1810088 1805924
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National Science Foundation
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  3. Abstract

    TiSe2is an exciting material because it can be tuned between superconducting and charge density wave (CDW) transitions. In the monolayer limit, TiSe2exhibits a sizable energy gap in the CDW phase that makes it a promising quantum material. It is shown that interfacing a single layer of TiSe2with dissimilar van der Waals materials enables control of its properties. Using angle‐resolved photoemission spectroscopy, the energy gap opening is analyzed as a function of temperature for TiSe2monolayers supported on different van der Waals substrates. A substantial increase in the CDW transition temperature of ≈45 K is observed on MoS2compared to graphite (highly oriented pyrolytic graphite) substrates. This control of the CDW in monolayer TiSe2is suggested to arise from varying charge screening of the unconventional CDW of TiSe2by the substrate. In addition, the suppression of CDW order and a complete closing of the energy gap by electron doping of monolayer TiSe2is demonstrated. Regulating the many‐body physics phenomena in monolayer TiSe2lays the foundation of modifying TiSe2in, for example, artificial van der Waals heterostructures and thus creates a new approach for utilizing the quantum states of TiSe2in device applications.

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