Yang, Ning, Chen, Hung-Yu, Wu, Jiangbin, Wu, Tong, Cao, Jun, Ling, X., Wang, H., and Guo, J. Multiscale Simulation of Ferroelectric Tunnel Junction Memory Enabled by van der Waals Heterojunction: Comparison to Experiment and Performance Projection. Retrieved from https://par.nsf.gov/biblio/10269421. IEEE International Electron Devices Meeting . Web. doi:10.1109/IEDM13553.2020.9371964.

Yang, Ning, Chen, Hung-Yu, Wu, Jiangbin, Wu, Tong, Cao, Jun, Ling, X., Wang, H., & Guo, J. Multiscale Simulation of Ferroelectric Tunnel Junction Memory Enabled by van der Waals Heterojunction: Comparison to Experiment and Performance Projection. IEEE International Electron Devices Meeting, (). Retrieved from https://par.nsf.gov/biblio/10269421. https://doi.org/10.1109/IEDM13553.2020.9371964

Yang, Ning, Chen, Hung-Yu, Wu, Jiangbin, Wu, Tong, Cao, Jun, Ling, X., Wang, H., and Guo, J. "Multiscale Simulation of Ferroelectric Tunnel Junction Memory Enabled by van der Waals Heterojunction: Comparison to Experiment and Performance Projection". IEEE International Electron Devices Meeting (). Country unknown/Code not available. https://doi.org/10.1109/IEDM13553.2020.9371964. https://par.nsf.gov/biblio/10269421.

@article{osti_10269421,
place = {Country unknown/Code not available}, title = {Multiscale Simulation of Ferroelectric Tunnel Junction Memory Enabled by van der Waals Heterojunction: Comparison to Experiment and Performance Projection}, url = {https://par.nsf.gov/biblio/10269421}, DOI = {10.1109/IEDM13553.2020.9371964}, abstractNote = {}, journal = {IEEE International Electron Devices Meeting}, author = {Yang, Ning and Chen, Hung-Yu and Wu, Jiangbin and Wu, Tong and Cao, Jun and Ling, X. and Wang, H. and Guo, J.}, editor = {null} }