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Title: Influence of growth temperature on defect states throughout the bandgap of MOCVD-grown β -Ga 2 O 3
Award ID(s):
1810041
NSF-PAR ID:
10274341
Author(s) / Creator(s):
; ; ; ; ; ;
Date Published:
Journal Name:
Applied Physics Letters
Volume:
117
Issue:
17
ISSN:
0003-6951
Page Range / eLocation ID:
172106
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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