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1. Ultrafast modulation of terahertz waves using on-chip dual-layer near-field coupling

   https://doi.org/10.1364/OPTICA.469461  

   Zhang, Yaxin; Ding, Kesen; Zeng, Hongxin; Kou, Wei; Zhou, Tianchi; Zhou, Hongji; Gong, Sen; Zhang, Ting; Wang, Lan; Liang, Shixiong; et al (November 2022, Optica)

   As a key potential component of future sixth-generation (6G) communication systems, terahertz (THz) technology has received much attention in recent years. However, a lack of effective high-speed direct modulation of THz waves has limited the development of THz communication technology. Currently, most high-speed modulators are based on photonic systems that can modulate electromagnetic waves with high speed using sophisticated optoelectronic conversion techniques. Yet, they usually suffer from low conversion efficiency of light to the THz range, resulting in low output power of the modulated THz waves. Here, we describe a guided-wave modulator for THz signals whose performance nearly matches that of existing in-line fiber-optic modulators. Our results demonstrate a maximum modulation depth greater than 20 dB (99%) and a maximum sinusoidal modulation speed of more than 30 GHz, with an insertion loss around 7 dB. We demonstrate the capabilities of this modulator in a point-to-point communication link with a 25 Gbit/s modulation speed. Our modulator design, based on near-field coupling of a THz transmission line to a single resonant meta-element, represents a powerful improvement for on-chip integrated high-performance THz devices. 

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2. Real-time dynamic wavelength tuning and intensity modulation of metal-clad nanolasers

   https://doi.org/10.1364/OE.400881  

   Deka, Suruj_S; Pan, Si_Hui; Jiang, Sizhu; El_Amili, Abdelkrim; Vallini, Felipe; Gu, Qing; Fainman, Yeshaiahu (September 2020, Optics Express)

   To realize ubiquitously used photonic integrated circuits, on-chip nanoscale sources are essential components. Subwavelength nanolasers, especially those based on a metal-clad design, already possess many desirable attributes for an on-chip source such as low thresholds, room-temperature operation and ultra-small footprints accompanied by electromagnetic isolation at pitch sizes down to ∼50 nm. Another valuable characteristic for a source would be control over its emission wavelength and intensity in real-time. Most efforts on tuning/modulation thus far report static changes based on irreversible techniques not suited for high-speed operation. In this study, we demonstratein-situdynamical tuning of the emission wavelength of a metallo-dielectric nanolaser at room temperature by applying an external DC electric field. Using an AC electric field, we show that it is also possible to modulate the output intensity of the nanolaser at high speeds. The nanolaser’s emission wavelength in the telecom band can be altered by as much as 8.35 nm with a tuning sensitivity of ∼1.01 nm/V. Additionally, the output intensity can be attenuated by up to 89%, a contrast sufficient for digital data communication purposes. Finally, we achieve an intensity modulation speed up to 400 MHz, limited only by the photodetector bandwidth used in this study, which underlines the capability of high-speed operation via this method. This is the first demonstration of a telecom band nanolaser source with dynamic spectral tuning and intensity modulation based on an external E-field to the best of our knowledge. 

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3. Low-loss fiber-to-chip interface for lithium niobate photonic integrated circuits

   Lingyan He, Mian Zhang (January 2019, Optics letters)

   Integrated lithium niobate (LN) photonic circuits have recently emerged as a promising candidate for advanced photonic functions such as high-speed modulation, nonlinear frequency conversion, and frequency comb generation. For practical applications, optical interfaces that feature low fiber-to-chip coupling losses are essential. So far, the fiber-to-chip loss (commonly >10  dB/facet) has dominated the total insertion losses of typical LN photonic integrated circuits, where on-chip losses can be as low as 0.03–0.1 dB/cm. Here we experimentally demonstrate a low-loss mode size converter for coupling between a standard lensed fiber and sub-micrometer LN rib waveguides. The coupler consists of two inverse tapers that convert the small optical mode of a rib waveguide into a symmetrically guided mode of a LN nanowire, featuring a larger mode area matched to that of a tapered optical fiber. The measured fiber-to-chip coupling loss is lower than 1.7 dB/facet with high fabrication tolerance and repeatability. Our results open the door for practical integrated LN photonic circuits efficiently interfaced with optical fibers. 

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4. Low-loss fiber-to-chip interface for lithium niobate photonic integrated circuits

   https://doi.org/10.1364/OL.44.002314  

   He, Lingyan; Zhang, Mian; Shams-Ansari, Amirhassan; Zhu, Rongrong; Wang, Cheng; Marko, Lončar (April 2019, Optics Letters)

   Integrated lithium niobate (LN) photonic circuits have recently emerged as a promising candidate for advanced photonic functions such as high-speed modulation, nonlinear frequency conversion, and frequency comb generation. For practical applications, optical interfaces that feature low fiber-to-chip coupling losses are essential. So far, the fiber-to-chip loss (commonly $>10\mathrm{dB}/\text{facet}$) has dominated the total insertion losses of typical LN photonic integrated circuits, where on-chip losses can be as low as 0.03–0.1 dB/cm. Here we experimentally demonstrate a low-loss mode size converter for coupling between a standard lensed fiber and sub-micrometer LN rib waveguides. The coupler consists of two inverse tapers that convert the small optical mode of a rib waveguide into a symmetrically guided mode of a LN nanowire, featuring a larger mode area matched to that of a tapered optical fiber. The measured fiber-to-chip coupling loss is lower than 1.7 dB/facet with high fabrication tolerance and repeatability. Our results open the door for practical integrated LN photonic circuits efficiently interfaced with optical fibers. 

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5. Ultrafast control of fractional orbital angular momentum of microlaser emissions

   https://doi.org/10.1038/s41377-020-00415-3  

   Zhang, Zhifeng; Zhao, Haoqi; Pires, Danilo Gomes; Qiao, Xingdu; Gao, Zihe; Jornet, Josep M.; Longhi, Stefano; Litchinitser, Natalia M.; Feng, Liang (October 2020, Light: Science & Applications)

   Abstract On-chip integrated laser sources of structured light carrying fractional orbital angular momentum (FOAM) are highly desirable for the forefront development of optical communication and quantum information–processing technologies. While integrated vortex beam generators have been previously demonstrated in different optical settings, ultrafast control and sweep of FOAM light with low-power control, suitable for high-speed optical communication and computing, remains challenging. Here we demonstrate fast control of the FOAM from a vortex semiconductor microlaser based on fast transient mixing of integer laser vorticities induced by a control pulse. A continuous FOAM sweep between charge 0 and charge +2 is demonstrated in a 100 ps time window, with the ultimate speed limit being established by the carrier recombination time in the gain medium. Our results provide a new route to generating vortex microlasers carrying FOAM that are switchable at GHz frequencies by an ultrafast control pulse. 

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