Search for novel electronically ordered states of matter emerging near quantum phase transitions is an intriguing frontier of condensed matter physics. In ruthenates, the interplay between Coulomb correlations among the 4
- Award ID(s):
- 1905801
- NSF-PAR ID:
- 10280591
- Date Published:
- Journal Name:
- Scientific Reports
- Volume:
- 10
- Issue:
- 1
- ISSN:
- 2045-2322
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
-
more » « less
Abstract d electronic states and their spin-orbit interactions, lead to complex forms of electronic phenomena. Here we investigate the double layered Sr3(Ru1−x Mnx )2O7and its doping-induced quantum phase transition from a metal to an antiferromagnetic Mott insulator. Using spectroscopic imaging with the scanning tunneling microscope, we visualize the evolution of the electronic states in real- and momentum-space. We find a partial-gap at the Fermi energy that develops with doping to form a weak Mott insulating state. Near the quantum phase transition, we discover a spatial electronic reorganization into a commensurate checkerboard charge order. These findings bear a resemblance to the universal charge order in the pseudogap phase of cuprates and demonstrate the ubiquity of charge order that emanates from doped Mott insulators. -
more » « less
A correlated material in the vicinity of an insulator–metal transition (IMT) exhibits rich phenomenology and a variety of interesting phases. A common avenue to induce IMTs in Mott insulators is doping, which inevitably leads to disorder. While disorder is well known to create electronic inhomogeneity, recent theoretical studies have indicated that it may play an unexpected and much more profound role in controlling the properties of Mott systems. Theory predicts that disorder might play a role in driving a Mott insulator across an IMT, with the emergent metallic state hosting a power-law suppression of the density of states (with exponent close to 1; V-shaped gap) centered at the Fermi energy. Such V-shaped gaps have been observed in Mott systems, but their origins are as-yet unknown. To investigate this, we use scanning tunneling microscopy and spectroscopy to study isovalent Ru substitutions in Sr3(Ir1-xRux)2O7(0 ≤
x ≤ 0.5) which drive the system into an antiferromagnetic, metallic state. Our experiments reveal that many core features of the IMT, such as power-law density of states, pinning of the Fermi energy with increasing disorder, and persistence of antiferromagnetism, can be understood as universal features of a disordered Mott system near an IMT and suggest that V-shaped gaps may be an inevitable consequence of disorder in doped Mott insulators. -
more » « less
Abstract The path from a Mott insulating phase to high temperature superconductivity encounters a rich set of unconventional phenomena involving the insulator-to-metal transition (IMT), such as emergent electronic orders and pseudogaps, that ultimately affect the condensation of Cooper pairs. A huge hindrance to understanding the origin of these phenomena is the difficulty in accessing doping levels near the parent state. The
J eff = 1/2 Mott state of the perovskite strontium iridates has revealed intriguing parallels to the cuprates, with the advantage that it provides unique access to the Mott transition. Here, we exploit this accessibility to study the IMT and the possible nearby electronic orders in the electron-doped bilayer iridate (Sr1 − xLax)3Ir2O7. Using spectroscopic imaging scanning tunneling microscopy, we image the La dopants in the top as well as the interlayer SrO planes. Surprisingly, we find a disproportionate distribution of La between these layers with the interlayer La being primarily responsible for the IMT. This reveals the distinct site-dependent effects of dopants on the electronic properties of bilayer systems. Electron doping also results in charge reordering. We find unidirectional electronic order concomitant with the structural distortion known to exist in this system. Intriguingly, similar to the single layer iridate, we also find local resonant states forming a checkerboard-like pattern trapped by La. This suggests that multiple charge orders may exist simultaneously in Mott systems, even with only one band crossing the Fermi energy. -
more » « less
Abstract We investigated the doping and temperature evolutions of the optical response of Sr3(Ir1−
x Mnx )2O7single crystals with 0 ≤x ≤ 0.36 by utilizing infrared spectroscopy. Substitution of 3d transition metal Mn ions into Sr3Ir2O7is expected to induce an insulator-to-metal transition via the decrease in the magnitude of the spin–orbit coupling and the hole doping. In sharp contrast, our data reveal the resilience of the spin–orbit coupling and the incoherent character of the charge transport. Upon Mn substitution, an incoherent in-gap excitation at about 0.25 eV appeared with the decrease in the strength of the optical transitions between the effective total angular momentumJ effbands of the Ir ions. The resonance energies of the optical transitions between theJ effbands which are directly proportional to the magnitude of the spin–orbit coupling hardly varied. In addition to these evolutions of the low-energy response, Mn substitution led to the emergence of a distinct high-energy optical excitation at about 1.2 eV which is larger than the resonance energies of the optical transitions between theJ effbands. This observation indicates that the Mn 3d states are located away from the Ir 5d states in energy and that the large difference in the on-site energies of the transition metal ions is responsible for the incoherent charge transport and the robustness of the spin–orbit coupling. The effect of Mn substitution was also registered in the temperature dependence of the electronic response. The anomaly in the optical response of the parent compound observed at the antiferromagnetic transition temperature is notably suppressed in the Mn-doped compounds despite the persistence of the long-range antiferromagnetic ordering. The suppression of the spin-charge coupling could be related to charge disproportionation of the Ir ions. -
more » « less
Abstract Materials with tunable infrared refractive index changes have enabled active metasurfaces for novel control of optical circuits, thermal radiation, and more. Ion‐gel‐gated epitaxial films of the perovskite cobaltite La1−
x Srx CoO3−δ (LSCO) with 0.00 ≤x ≤ 0.70 offer a new route to significant, voltage‐tuned, nonvolatile refractive index modulation for infrared active metasurfaces, shown here through Kramers–Kronig‐consistent dispersion models, structural and electronic transport characterization, and electromagnetic simulations before and after electrochemical reduction. As‐grown perovskite films are high‐index insulators forx < 0.18 but lossy metals forx > 0.18, due to a percolation insulator‐metal transition. Positive‐voltage gating of LSCO transistors withx > 0.18 reveals a metal‐insulator transition from the metallic perovskite phase to a high‐index (n > 2.5), low‐loss insulating phase, accompanied by a perovskite to oxygen‐vacancy‐ordered brownmillerite transformation at highx . Atx < 0.18, despite nominally insulating character, the LSCO films undergo remarkable refractive index changes to another lower‐index, lower‐loss insulating perovskite state with Δn > 0.6. In simulations of plasmonic metasurfaces, these metal‐insulator and insulator‐insulator transitions support significant, varied mid‐infrared reflectance modulation, thus framing electrochemically gated LSCO as a diverse library of room‐temperature phase‐change materials for applications including dynamic thermal imaging, camouflage, and optical memories.
- Free Publicly Accessible Full Text
-
Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.1038/s41598-020-79263-5
