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1. Field-effect conductivity scaling for two-dimensional materials with tunable impurity density

   https://doi.org/10.1088/2053-1583/ac72b0  

   Wang, Chulin ; Peng, Lintao ; Wells, Spencer A ; Cain, Jeffrey D ; Huang, Yi-Kai ; Rhoads, Lawrence A ; Dravid, Vinayak P ; Hersam, Mark C ; Grayson, Matthew A ( June 2022 , 2D Materials)

   Abstract A scaling law is demonstrated in the conductivity of gated two-dimensional (2D) materials with tunable concentrations of ionized impurity scatterers. Experimental data is shown to collapse onto a single 2D conductivity scaling (2DCS) curve when the mobility is scaled by r , the relative impurity-induced scattering, and the gate voltage is shifted by V s , a consequence of impurity-induced doping. This 2DCS analysis is demonstrated first in an encapsulated 2D black phosphorus multilayer at T = 100 K with charge trap densities programmed by a gate bias upon cooldown, and next in a Bi 2 Se 3 2D monolayer at room temperature exposed to varying concentrations of gas adsorbates. The observed scaling can be explained using a conductivity model with screened ionized impurity scatterers. The slope of the r  vs.  V s plot defines a disorder-charge specific scattering rate Γ q = d r / d V s equivalent to a scattering strength per unit impurity charge density: Γ q > 0 indicates a preponderance of positively charged impurities with Γ q < 0 for negatively charged. This 2DCS analysis is expected to be applicable in arbitrary 2D materials systems with tunable impurity density, which will advance 2D materials characterization and improve performance of 2D sensors and transistors. 

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2. RTD Light Emission around 1550 nm with IQE up to 6% at 300 K

   https://doi.org/10.1109/DRC50226.2020.9135175  

   Brown, E. R. ; Zhang, W-D. ; Fakhimi, P. ; Growden, T. A. ; Berger, P.R. ( June 2020 , IEEE Device Research Conference (DRC), Columbus, OH (June 22-24, 2020))

   Resonant tunneling diodes (RTDs) have come full-circle in the past 10 years after their demonstration in the early 1990s as the fastest room-temperature semiconductor oscillator, displaying experimental results up to 712 GHz and fmax values exceeding 1.0 THz [1]. Now the RTD is once again the preeminent electronic oscillator above 1.0 THz and is being implemented as a coherent source [2] and a self-oscillating mixer [3], amongst other applications. This paper concerns RTD electroluminescence – an effect that has been studied very little in the past 30+ years of RTD development, and not at room temperature. We present experiments and modeling of an n-type In0.53Ga0.47As/AlAs double-barrier RTD operating as a cross-gap light emitter at ~300K. The MBE-growth stack is shown in Fig. 1(a). A 15-μm-diam-mesa device was defined by standard planar processing including a top annular ohmic contact with a 5-μm-diam pinhole in the center to couple out enough of the internal emission for accurate free-space power measurements [4]. The emission spectra have the behavior displayed in Fig. 1(b), parameterized by bias voltage (VB). The long wavelength emission edge is at  = 1684 nm - close to the In0.53Ga0.47As bandgap energy of Ug ≈ 0.75 eV at 300 K. The spectral peaks for VB = 2.8 and 3.0 V both occur around  = 1550 nm (h = 0.75 eV), so blue-shifted relative to the peak of the “ideal”, bulk InGaAs emission spectrum shown in Fig. 1(b) [5]. These results are consistent with the model displayed in Fig. 1(c), whereby the broad emission peak is attributed to the radiative recombination between electrons accumulated on the emitter side, and holes generated on the emitter side by interband tunneling with current density Jinter. The blue-shifted main peak is attributed to the quantum-size effect on the emitter side, which creates a radiative recombination rate RN,2 comparable to the band-edge cross-gap rate RN,1. Further support for this model is provided by the shorter wavelength and weaker emission peak shown in Fig. 1(b) around = 1148 nm. Our quantum mechanical calculations attribute this to radiative recombination RR,3 in the RTD quantum well between the electron ground-state level E1,e, and the hole level E1,h. To further test the model and estimate quantum efficiencies, we conducted optical power measurements using a large-area Ge photodiode located ≈3 mm away from the RTD pinhole, and having spectral response between 800 and 1800 nm with a peak responsivity of ≈0.85 A/W at  =1550 nm. Simultaneous I-V and L-V plots were obtained and are plotted in Fig. 2(a) with positive bias on the top contact (emitter on the bottom). The I-V curve displays a pronounced NDR region having a current peak-to-valley current ratio of 10.7 (typical for In0.53Ga0.47As RTDs). The external quantum efficiency (EQE) was calculated from EQE = e∙IP/(∙IE∙h) where IP is the photodiode dc current and IE the RTD current. The plot of EQE is shown in Fig. 2(b) where we see a very rapid rise with VB, but a maximum value (at VB= 3.0 V) of only ≈2×10-5. To extract the internal quantum efficiency (IQE), we use the expression EQE= c ∙i ∙r ≡ c∙IQE where ci, and r are the optical-coupling, electrical-injection, and radiative recombination efficiencies, respectively [6]. Our separate optical calculations yield c≈3.4×10-4 (limited primarily by the small pinhole) from which we obtain the curve of IQE plotted in Fig. 2(b) (right-hand scale). The maximum value of IQE (again at VB = 3.0 V) is 6.0%. From the implicit definition of IQE in terms of i and r given above, and the fact that the recombination efficiency in In0.53Ga0.47As is likely limited by Auger scattering, this result for IQE suggests that i might be significantly high. To estimate i, we have used the experimental total current of Fig. 2(a), the Kane two-band model of interband tunneling [7] computed in conjunction with a solution to Poisson’s equation across the entire structure, and a rate-equation model of Auger recombination on the emitter side [6] assuming a free-electron density of 2×1018 cm3. We focus on the high-bias regime above VB = 2.5 V of Fig. 2(a) where most of the interband tunneling should occur in the depletion region on the collector side [Jinter,2 in Fig. 1(c)]. And because of the high-quality of the InGaAs/AlAs heterostructure (very few traps or deep levels), most of the holes should reach the emitter side by some combination of drift, diffusion, and tunneling through the valence-band double barriers (Type-I offset) between InGaAs and AlAs. The computed interband current density Jinter is shown in Fig. 3(a) along with the total current density Jtot. At the maximum Jinter (at VB=3.0 V) of 7.4×102 A/cm2, we get i = Jinter/Jtot = 0.18, which is surprisingly high considering there is no p-type doping in the device. When combined with the Auger-limited r of 0.41 and c ≈ 3.4×10-4, we find a model value of IQE = 7.4% in good agreement with experiment. This leads to the model values for EQE plotted in Fig. 2(b) - also in good agreement with experiment. Finally, we address the high Jinter and consider a possible universal nature of the light-emission mechanism. Fig. 3(b) shows the tunneling probability T according to the Kane two-band model in the three materials, In0.53Ga0.47As, GaAs, and GaN, following our observation of a similar electroluminescence mechanism in GaN/AlN RTDs (due to strong polarization field of wurtzite structures) [8]. The expression is Tinter = (2/9)∙exp[(-2 ∙Ug 2 ∙me)/(2h∙P∙E)], where Ug is the bandgap energy, P is the valence-to-conduction-band momentum matrix element, and E is the electric field. Values for the highest calculated internal E fields for the InGaAs and GaN are also shown, indicating that Tinter in those structures approaches values of ~10-5. As shown, a GaAs RTD would require an internal field of ~6×105 V/cm, which is rarely realized in standard GaAs RTDs, perhaps explaining why there have been few if any reports of room-temperature electroluminescence in the GaAs devices. [1] E.R. Brown,et al., Appl. Phys. Lett., vol. 58, 2291, 1991. [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [2] M. Feiginov et al., Appl. Phys. Lett., 99, 233506, 2011. [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [3] Y. Nishida et al., Nature Sci. Reports, 9, 18125, 2019. [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [4] P. Fakhimi, et al., 2019 DRC Conference Digest. [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018). [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018). 

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3. Variation of effective filament diameter, irreversibility field, anisotropy, and pinning efficiency in Bi-2212 round wires

   https://doi.org/10.1088/1361-6668/ad13b2  

   Tarantini, Chiara ; Barua, Shaon ; Oloye, Temidayo Abiola ; Kametani, Fumitake ; Jiang, Jianyi ; Hellstrom, Eric E. ; Larbalestier, David C. ( December 2023 , Superconductor Science and Technology)

   In recent years Bi₂Sr₂CaCu₂O_x(Bi-2212) received increasing attention due to its round wire multifilamentary architecture, a unique feature in high-T_csuperconductor. In fact, round wires are preferable for magnet designs, including solenoids for nuclear magnetic resonance (NMR) or research purpose and accelerator magnets. However, due to the narrow over-pressure heat treatment conditions necessary to obtain highJ_cand to the peculiar microstructure of Bi-2212 wires, a full understanding of the correlations between the different properties has not yet been developed. In this paper we investigate the effect of a vital part of Bi-2212 optimization, the maximum heat-treatment temperatureT_maxin the range of 885 °C–896 °C, on the variations ofJ_c, effective filament diameterd_eff, anisotropyγ, INTER- and intra-grain irreversibility fields and pinning energiesU₀, all critical parameters in unravelling the complex mix of vortex pinning and connectivity that ultimately determines the critical current density. We found thatd_effof the higherJ_cwires heat-treated at lower temperature is much smaller than for the lowerJ_cwires. Moreover, a systematic increase of the irreversibility field and a decrease of the intrinsic Bi-2212 anisotropy underpins the higherJ_c. The analysis of the pinning energies reveals that there is little sample-to-sample variation in the INTER-grain pinning, whereas in all samples the intra-grain pinning has an enhancement below ∼40–45 K becoming more and more evident with increasingJ_c. These results suggest that the overallJ_cperformance are not only related to the wire microstructure and connectivity, which obviously affect the INTER-grain properties, but they are also intimately related to the intrinsic and intra-grain properties such asγandU₀.

    

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4. Raman and Electrical Transport Properties of Few-Layered Arsenic-Doped Black Phosphorus

   https://doi.org/10.1039/C9NR04598H  

   Pradhan, Nihar Ranjan ; Garcia, Carlos ; Lucking, Michael ; Pakhira, Sriamanta ; Martinez, Juan ; Rosenmann, Daniel ; Divan, Ralu ; Sumant, Anirudha ; Terrones, H. ; Mendoza-Cortes, Jose L. ; et al ( January 2019 , Nanoscale)

   Black phosphorus (b-P) is an allotrope of phosphorus whose properties have attracted great attention. In contrast to other 2D compounds, or pristine b-P, the properties of b-P alloys have yet to be explored. In this report, we present a detailed study on the Raman spectra and on the temperature dependence of the electrical transport properties of As-doped black phosphorus (b-AsP) for an As fraction x = 0.25. The observed complex Raman spectra were interpreted with the support of Density Functional Theory (DFT) calculations since each original mode splits in three due to P-P, P-As, and As-As bonds. Field-effect transistors (FET) fabricated from few-layered b-AsP exfoliated onto Si/SiO 2 substrates exhibit hole-doped like conduction with a room temperature ON/OFF current ratio of ~10 3 and an intrinsic field-effect mobility approaching ~300 cm 2 /Vs at 300 K which increases up to 600 cm 2 /Vs at 100 K when measured via a 4-terminal method. Remarkably, these values are comparable to, or higher, than those initially reported for pristine b-P, indicating that this level of As doping is not detrimental to its transport properties. The ON to OFF current ratio is observed to increase up to 10 5 at 4 K. At high gate voltages b-AsP displays metallic behavior with the resistivity decreasing with decreasing temperature and saturating below T ∼ 100 K, indicating a gate-induced insulator to metal transition. Similarly to pristine b-P, its transport properties reveal a high anisotropy between armchair (AC) and zig-zag (ZZ) directions. Electronic band structure computed through periodic dispersion-corrected hybrid Density Functional Theory (DFT) indicate close proximity between the Fermi level and the top of the valence band(s) thus explaining its hole doped character. Our study shows that b-AsP has potential for optoelectronics applications that benefit from its anisotropic character and the ability to tune its band gap as a function of the number of layers and As content. 

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5. Phonon mixing in the charge density wave state of ScV6Sn6

   https://doi.org/10.1038/s41535-023-00590-7  

   Gu, Yanhong ; Ritz, Ethan T. ; Meier, William R. ; Blockmon, Avery ; Smith, Kevin ; Madhogaria, Richa Pokharel ; Mozaffari, Shirin ; Mandrus, David ; Birol, Turan ; Musfeldt, Janice L. ( December 2023 , npj Quantum Materials)

   Kagomé metals are widely recognized, versatile platforms for exploring topological properties, unconventional electronic correlations, magnetic frustration, and superconductivity. In theRV₆Sn₆family of materials (R= Sc, Y, Lu), ScV₆Sn₆hosts an unusual charge density wave ground state as well as structural similarities with theAV₃Sb₅system (A= K, Cs, Rb). In this work, we combine Raman scattering spectroscopy with first-principles lattice dynamics calculations to reveal phonon mixing processes in the charge density wave state of ScV₆Sn₆. In the low temperature phase, we find at least four new peaks in the vicinity of the V-containing totally symmetric mode near 240 cm⁻¹suggesting that the density wave acts to mix modes ofP6/mmmand$$R\bar{3}m$$$R\overline{3}m$symmetry - a result that we quantify by projecting phonons of the high symmetry state onto those of the lower symmetry structure. We also test the stability of the short-range ordered density wave state under compression and propose that both physical and chemical pressure quench the effect. We discuss these findings in terms of symmetry and the structure-property trends that can be unraveled in this system.

    

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