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The wide-gap semiconducting perovskite BaSnO3 has attracted attention since the discovery of outstanding mobility at high electron densities, spurred on by potential applications in oxide, transparent, and power electronics. Despite progress, much remains to be understood in terms of mobility-limiting scattering in BaSnO3 thin films and thus mobility optimization. Here, we apply solid-state ion-gel-based electrolyte gating to electrostatically control electron density over a wide range (1018 cm−3 to >1020 cm−3) in BaSnO3 films. Temperature- and gate-voltage-dependent transport data then probe scattering mechanisms and mobility vs electron density alone, independently of sample-to-sample defect density variations. This is done on molecular-beam-epitaxy- and sputter-deposited films as a function of thickness, initial chemical doping, and initial mobility. Remarkably universal behavior occurs, the mobility first increasing with electron density to ∼1020 cm−3 before decreasing slightly. This trend is quantitatively analyzed at cryogenic and room temperatures using analytical models for phonon, ionized impurity, charged dislocation, surface/interface roughness, and electrolyte-induced scattering. The mobility maximum is thus understood to arise from competition between charged impurity/dislocation scattering and electrolyte scattering. The gate-voltage-induced mobility enhancement is found as large as 2000%, realizing 300 K mobility up to 140 cm2 V−1 s−1. This work thus significantly advances the understanding of mobility-limiting scattering processes in BaSnO3, resulting in outstanding room temperature mobilities.
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Field-effect conductivity scaling for two-dimensional materials with tunable impurity density
Abstract A scaling law is demonstrated in the conductivity of gated two-dimensional (2D) materials with tunable concentrations of ionized impurity scatterers. Experimental data is shown to collapse onto a single 2D conductivity scaling (2DCS) curve when the mobility is scaled by r , the relative impurity-induced scattering, and the gate voltage is shifted by V s , a consequence of impurity-induced doping. This 2DCS analysis is demonstrated first in an encapsulated 2D black phosphorus multilayer at T = 100 K with charge trap densities programmed by a gate bias upon cooldown, and next in a Bi 2 Se 3 2D monolayer at room temperature exposed to varying concentrations of gas adsorbates. The observed scaling can be explained using a conductivity model with screened ionized impurity scatterers. The slope of the r vs. V s plot defines a disorder-charge specific scattering rate Γ q = d r / d V s equivalent to a scattering strength per unit impurity charge density: Γ q > 0 indicates a preponderance of positively charged impurities with Γ q < 0 for negatively charged. This 2DCS analysis is expected to be applicable in arbitrary 2D materials systems with tunable impurity density, which will advance 2D materials characterization and improve performance of 2D sensors and transistors.
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- Award ID(s):
- 1729016
- PAR ID:
- 10403251
- Date Published:
- Journal Name:
- 2D Materials
- Volume:
- 9
- Issue:
- 3
- ISSN:
- 2053-1583
- Page Range / eLocation ID:
- 031002
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.1088/2053-1583/ac72b0
