The minimization of the subthreshold swing (SS) in transistors is essential for low‐voltage operation and lower power consumption, both critical for mobile devices and internet of things (IoT) devices. The conventional metal‐oxide‐semiconductor field‐effect transistor requires sophisticated dielectric engineering to achieve nearly ideal SS (60 mV dec−1at room temperature). However, another type of transistor, the junction field‐effect transistor (JFET) is free of dielectric layer and can reach the theoretical SS limit without complicated dielectric engineering. The construction of a 2D SnSe/MoS2van der Waals (vdW) heterostructure‐based JFET with nearly ideal SS is reported. It is shown that the SnSe/MoS2vdW heterostructure exhibits excellent p–n diode rectifying characteristics with low saturate current. Using the SnSe as the gate and MoS2as the channel, the SnSe/MoS2vdW heterostructure exhibit well‐behavioured n‐channel JFET characteristics with a small pinch‐off voltage
An analysis of the optoelectronic properties and photocurrent generation mechanisms in 2D multilayer crystallites of black phosphorus (BP) is conducted from 350 K down to cryogenic temperatures
- NSF-PAR ID:
- 10286509
- Publisher / Repository:
- Wiley Blackwell (John Wiley & Sons)
- Date Published:
- Journal Name:
- physica status solidi (a)
- Volume:
- 218
- Issue:
- 20
- ISSN:
- 1862-6300
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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