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Title: Valley relaxation of resident electrons and holes in a monolayer semiconductor: Dependence on carrier density and the role of substrate-induced disorder
Award ID(s):
1955889 1904716 1933214
NSF-PAR ID:
10288868
Author(s) / Creator(s):
; ; ; ; ;
Date Published:
Journal Name:
Physical Review Materials
Volume:
5
Issue:
4
ISSN:
2475-9953
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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