skip to main content
US FlagAn official website of the United States government
dot gov icon
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
https lock icon
Secure .gov websites use HTTPS
A lock ( lock ) or https:// means you've safely connected to the .gov website. Share sensitive information only on official, secure websites.

Explore Research Products in the PAR
It may take a few hours for recently added research products to appear in PAR search results.


Title: Low-energy room-temperature optical switching in mixed-dimensionality nanoscale perovskite heterojunctions
Long-lived photon-stimulated conductance changes in solid-state materials can enable optical memory and brain-inspired neuromorphic information processing. It remains challenging to realize optical switching with low-energy consumption, and new mechanisms and design principles giving rise to persistent photoconductivity (PPC) can help overcome an important technological hurdle. Here, we demonstrate versatile heterojunctions between metal-halide perovskite nanocrystals and semiconducting single-walled carbon nanotubes that enable room-temperature, long-lived (thousands of seconds), writable, and erasable PPC. Optical switching and basic neuromorphic functions can be stimulated at low operating voltages with femto- to pico-joule energies per spiking event, and detailed analysis demonstrates that PPC in this nanoscale interface arises from field-assisted control of ion migration within the nanocrystal array. Contactless optical measurements also suggest these systems as potential candidates for photonic synapses that are stimulated and read in the optical domain. The tunability of PPC shown here holds promise for neuromorphic computing and other technologies that use optical memory.  more » « less
Award ID(s):
1727523
PAR ID:
10291199
Author(s) / Creator(s):
; ; ; ; ; ; ; ; ; ;
Date Published:
Journal Name:
Science Advances
Volume:
7
Issue:
18
ISSN:
2375-2548
Page Range / eLocation ID:
eabf1959
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
More Like this
  1. ; ; ; ; ; ; ; ; (, Advanced Electronic Materials)
    Abstract Memristors have emerged as transformative devices to enable neuromorphic and in‐memory computing, where success requires the identification and development of materials that can overcome challenges in retention and device variability. Here, high‐entropy oxide composed of Zr, Hf, Nb, Ta, Mo, and W oxides is first demonstrated as a switching material for valence change memory. This multielement oxide material provides uniform distribution and higher concentration of oxygen vacancies, limiting the stochastic behavior in resistive switching. (Zr, Hf, Nb, Ta, Mo, W) high‐entropy‐oxide‐based memristors manifest the “cocktail effect,” exhibiting comparable retention with HfO2‐ or Ta2O5‐based memristors while also demonstrating the gradual conductance modulation observed in WO3‐based memristors. The electrical characterization of these high‐entropy‐oxide‐based memristors demonstrates forming‐free operation, low device and cycle variability, gradual conductance modulation, 6‐bit operation, and long retention which are promising for neuromorphic applications. 
    more » « less
  2. ; ; ; ; (, Journal of Materials Research)
    Neuromorphic hardware promises to revolutionize information technology with brain-inspired parallel processing, in-memory computing, and energy-efficient implementation of artificial intelligence and machine learning. In particular, two-dimensional (2D) memtransistors enable gate-tunable non-volatile memory, bio-realistic synaptic phenomena, and atomically thin scaling. However, previously reported 2D memtransistors have not achieved low operating voltages without compromising gate-tunability. Here, we overcome this limitation by demonstrating MoS2 memtransistors with short channel lengths < 400 nm, low operating voltages < 1 V, and high field-effect switching ratios > 10,000 while concurrently achieving strong memristive responses. This functionality is realized by fabricating back-gated memtransistors using highly polycrystalline monolayer MoS2 channels on high-κ Al2O3 dielectric layers. Finite-element simulations confirm enhanced electrostatic modulation near the channel contacts, which reduces operating voltages without compromising memristive or field-effect switching. Overall, this work demonstrates a pathway for reducing the size and power consumption of 2D memtransistors as is required for ultrahigh-density integration. 
    more » « less
  3. ; ; (, Applied Physics Letters)
    Resistive switching is a promising technology for artificial synapses, the most critical component and building block of a neural network for brain-inspired neuromorphic computing. The artificial synapse is capable of emulating a signal process and memory functions of biological synapses. The artificial synapse fabricated by natural bioorganic materials is essential for developing soft, flexible, and biocompatible electronics and sustainable, biodegradable, and environmentally friendly neuromorphic systems. In this work, a natural biomaterial—honey based resistive switching device—was demonstrated to emulate some important functionalities of biological synapses, including synaptic potentiation and depression, short-term and long-term memory, spatial summation, and shunting inhibition. The results indicate the potential of honey based resistive switching for artificial synaptic devices in renewable neuromorphic systems and bioelectronics. 
    more » « less
  4. ; ; ; ; ; ; ; ; (, Optical Fiber Communication Conference (OFC))
    Dong, P.; Kani, J.; Xie, C.; Casellas, R.; Cole, C.; Li, M. (Ed.)
    Neuromorphic photonics exploit optical device physics for neuron models, and optical interconnects for distributed, parallel, and analog processing for high-bandwidth, low-latency and low switching energy applications in artificial intelligence and neuromorphic computing. 
    more » « less
  5. ; ; ; (, Applied Physics Letters)
    Memristors based on 2D semiconductors such as MoS2 and its derivative materials exhibit analog switching behaviors capable of emulating some synaptic functions, including short-term plasticity, long-term potentiation, and spike-time-dependent-plasticity. Additional investigation is needed to realize reliable control of such synaptic behaviors for practical device implementation. To meet this scientific need, we fabricated MoS2-based memristors and studied their paired-pulse facilitation (PPF) and long-term memory characteristics under different pulse programming settings. This research has provided a guideline for identifying the programming settings for different neuromorphic processes. For example, a specific setting resulting in PPF > 30% and long-term conductance change < 20% has been identified to be suited for processing real-time temporal information. Furthermore, this research also indicates that the MoS2 memristor keeps having an almost constant relative change in conductance but greatly enhanced drive current level under laser illumination. This behavior can enable an easy integration of such memristive devices with state-of-the-art controller circuits for practice neuromorphic control applications. 
    more » « less
  • Citation Formats
  • MLA
  • APA
  • Chicago
  • BibTeX
  • Save / Share this Record
  • Send to Email