Memristors Based on (Zr, Hf, Nb, Ta, Mo, W) High‐Entropy Oxides
- Award ID(s):
- 1810119
- Publication Date:
- NSF-PAR ID:
- 10359951
- Journal Name:
- Advanced Electronic Materials
- Volume:
- 7
- Issue:
- 5
- Page Range or eLocation-ID:
- Article No. 2001258
- ISSN:
- 2199-160X
- Publisher:
- Wiley Blackwell (John Wiley & Sons)
- Sponsoring Org:
- National Science Foundation
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