Ahn, Minhyung, Park, Yongmo, Lee, Seung Hwan, Chae, Sieun, Lee, Jihang, Heron, John T., Kioupakis, Emmanouil, Lu, Wei D., and Phillips, Jamie D.. Memristors Based on (Zr, Hf, Nb, Ta, Mo, W) High‐Entropy Oxides. Advanced Electronic Materials 7.5 Web. doi:10.1002/aelm.202001258.

Ahn, Minhyung, Park, Yongmo, Lee, Seung Hwan, Chae, Sieun, Lee, Jihang, Heron, John T., Kioupakis, Emmanouil, Lu, Wei D., & Phillips, Jamie D.. Memristors Based on (Zr, Hf, Nb, Ta, Mo, W) High‐Entropy Oxides. Advanced Electronic Materials, 7 (5). https://doi.org/10.1002/aelm.202001258

Ahn, Minhyung, Park, Yongmo, Lee, Seung Hwan, Chae, Sieun, Lee, Jihang, Heron, John T., Kioupakis, Emmanouil, Lu, Wei D., and Phillips, Jamie D.. "Memristors Based on (Zr, Hf, Nb, Ta, Mo, W) High‐Entropy Oxides". Advanced Electronic Materials 7 (5). Country unknown/Code not available: Wiley Blackwell (John Wiley & Sons). https://doi.org/10.1002/aelm.202001258. https://par.nsf.gov/biblio/10359951.

@article{osti_10359951,
place = {Country unknown/Code not available}, title = {Memristors Based on (Zr, Hf, Nb, Ta, Mo, W) High‐Entropy Oxides}, url = {https://par.nsf.gov/biblio/10359951}, DOI = {10.1002/aelm.202001258}, abstractNote = {Not Available}, journal = {Advanced Electronic Materials}, volume = {7}, number = {5}, publisher = {Wiley Blackwell (John Wiley & Sons)}, author = {Ahn, Minhyung and Park, Yongmo and Lee, Seung Hwan and Chae, Sieun and Lee, Jihang and Heron, John T. and Kioupakis, Emmanouil and Lu, Wei D. and Phillips, Jamie D.}, }