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Title: Memristors Based on (Zr, Hf, Nb, Ta, Mo, W) High‐Entropy Oxides
Authors:
 ;  ;  ;  ;  ;  ;  ;  ;  
Award ID(s):
1810119
Publication Date:
NSF-PAR ID:
10359951
Journal Name:
Advanced Electronic Materials
Volume:
7
Issue:
5
Page Range or eLocation-ID:
Article No. 2001258
ISSN:
2199-160X
Publisher:
Wiley Blackwell (John Wiley & Sons)
Sponsoring Org:
National Science Foundation
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