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1. Strong room-temperature bulk nonlinear Hall effect in a spin-valley locked Dirac material

   https://doi.org/10.1038/s41467-023-35989-0  

   Min, Lujin ; Tan, Hengxin ; Xie, Zhijian ; Miao, Leixin ; Zhang, Ruoxi ; Lee, Seng Huat ; Gopalan, Venkatraman ; Liu, Chao-Xing ; Alem, Nasim ; Yan, Binghai ; et al ( December 2023 , Nature Communications)

   Abstract Nonlinear Hall effect (NLHE) is a new type of Hall effect with wide application prospects. Practical device applications require strong NLHE at room temperature (RT). However, previously reported NLHEs are all low-temperature phenomena except for the surface NLHE of TaIrTe 4 . Bulk RT NLHE is highly desired due to its ability to generate large photocurrent. Here, we show the spin-valley locked Dirac state in BaMnSb 2 can generate a strong bulk NLHE at RT. In the microscale devices, we observe the typical signature of an intrinsic NLHE, i.e. the transverse Hall voltage quadratically scales with the longitudinal current as the current is applied to the Berry curvature dipole direction. Furthermore, we also demonstrate our nonlinear Hall device’s functionality in wireless microwave detection and frequency doubling. These findings broaden the coupled spin and valley physics from 2D systems into a 3D system and lay a foundation for exploring bulk NLHE’s applications.
2. Optical analog of valley Hall effect of 2D excitons in hyperbolic metamaterial

   https://doi.org/10.1364/OPTICA.404063  

   Guddala, Sriram ; Khatoniar, Mandeep ; Yama, Nicholas ; Liu, Wenxiao ; Agarwal, Girish S. ; Menon, Vinod M. ( January 2021 , Optica)

   The robust spin and momentum valley locking of electrons in two-dimensional semiconductors makes the valley degree of freedom of great utility for functional optoelectronic devices. Owing to the difference in optical selection rules for the different valleys, these valley electrons can be addressed optically. The electrons and excitons in these materials exhibit the valley Hall effect, where the carriers from specific valleys are directed to different directions under electrical or thermal bias. Here we report the optical analog of valley Hall effect, where the light emission from the valley-polarized excitons in a monolayer${\mathrm{W}\mathrm{S}}_2$propagates in different directions owing to the preferential coupling of excitonic emission to the high momentum states of the hyperbolic metamaterial. The experimentally observed effects are corroborated with theoretical modeling of excitonic emission in the near field of hyperbolic media. The demonstration of the optical valley Hall effect using a bulk artificial photonic media without the need for nanostructuring opens the possibility of realizing valley-based excitonic circuits operating at room temperature.
3. Unidirectional Maxwellian spin waves

   https://doi.org/10.1515/nanoph-2019-0092  

   Van Mechelen, Todd ; Jacob, Zubin ( June 2019 , Nanophotonics)

   Abstract In this article, we develop a unified perspective of unidirectional topological edge waves in nonreciprocal media. We focus on the inherent role of photonic spin in nonreciprocal gyroelectric media, i.e. magnetized metals or magnetized insulators. Due to the large body of contradicting literature, we point out at the outset that these Maxwellian spin waves are fundamentally different from well-known topologically trivial surface plasmon polaritons. We first review the concept of a Maxwell Hamiltonian in nonreciprocal media, which immediately reveals that the gyrotropic coefficient behaves as a photon mass in two dimensions. Similar to the Dirac mass, this photonic mass opens bandgaps in the energy dispersion of bulk propagating waves. Within these bulk photonic bandgaps, three distinct classes of Maxwellian edge waves exist – each arising from subtle differences in boundary conditions. On one hand, the edge wave solutions are rigorous photonic analogs of Jackiw-Rebbi electronic edge states. On the other hand, for the exact same system, they can be high frequency photonic counterparts of the integer quantum Hall effect, familiar at zero frequency. Our Hamiltonian approach also predicts the existence of a third distinct class of Maxwellian edge wave exhibiting topological protection. This occurs in an intriguing topological bosonicmore »phase of matter, fundamentally different from any known electronic or photonic medium. The Maxwellian edge state in this unique quantum gyroelectric phase of matter necessarily requires a sign change in gyrotropy arising from nonlocality (spatial dispersion). In a Drude system, this behavior emerges from a spatially dispersive cyclotron frequency that switches sign with momentum. A signature property of these topological electromagnetic edge states is that they are oblivious to the contacting medium, i.e. they occur at the interface of the quantum gyroelectric phase and any medium (even vacuum). This is because the edge state satisfies open boundary conditions – all components of the electromagnetic field vanish at the interface. Furthermore, the Maxwellian spin waves exhibit photonic spin-1 quantization in exact analogy with their supersymmetric spin-1/2 counterparts. The goal of this paper is to discuss these three foundational classes of edge waves in a unified perspective while providing in-depth derivations, taking into account nonlocality and various boundary conditions. Our work sheds light on the important role of photonic spin in condensed matter systems, where this definition of spin is also translatable to topological photonic crystals and metamaterials.« less
4. Silicon nitride stress-optic microresonator modulator for optical control applications

   https://doi.org/10.1364/OE.467721  

   Wang, Jiawei ; Liu, Kaikai ; Harrington, Mark W. ; Rudy, Ryan Q. ; Blumenthal, Daniel J. ( August 2022 , Optics Express)

   Modulation-based control and locking of lasers, filters and other photonic components is a ubiquitous function across many applications that span the visible to infrared (IR), including atomic, molecular and optical (AMO), quantum sciences, fiber communications, metrology, and microwave photonics. Today, modulators used to realize these control functions consist of high-power bulk-optic components for tuning, sideband modulation, and phase and frequency shifting, while providing low optical insertion loss and operation from DC to 10s of MHz. In order to reduce the size, weight and cost of these applications and improve their scalability and reliability, modulation control functions need to be implemented in a low loss, wafer-scale CMOS-compatible photonic integration platform. The silicon nitride integration platform has been successful at realizing extremely low waveguide losses across the visible to infrared and components including high performance lasers, filters, resonators, stabilization cavities, and optical frequency combs. Yet, progress towards implementing low loss, low power modulators in the silicon nitride platform, while maintaining wafer-scale process compatibility has been limited. Here we report a significant advance in integration of a piezo-electric (PZT, lead zirconate titanate) actuated micro-ring modulation in a fully-planar, wafer-scale silicon nitride platform, that maintains low optical loss (0.03 dB/cm in a 625 µmmore »resonator) at 1550 nm, with an order of magnitude increase in bandwidth (DC - 15 MHz 3-dB and DC - 25 MHz 6-dB) and order of magnitude lower power consumption of 20 nW improvement over prior PZT modulators. The modulator provides a >14 dB extinction ratio (ER) and 7.1 million quality-factor (Q) over the entire 4 GHz tuning range, a tuning efficiency of 162 MHz/V, and delivers the linearity required for control applications with 65.1 dB·Hz^2/3and 73.8 dB·Hz^2/3third-order intermodulation distortion (IMD3) spurious free dynamic range (SFDR) at 1 MHz and 10 MHz respectively. We demonstrate two control applications, laser stabilization in a Pound-Drever Hall (PDH) lock loop, reducing laser frequency noise by 40 dB, and as a laser carrier tracking filter. This PZT modulator design can be extended to the visible in the ultra-low loss silicon nitride platform with minor waveguide design changes. This integration of PZT modulation in the ultra-low loss silicon nitride waveguide platform enables modulator control functions in a wide range of visible to IR applications such as atomic and molecular transition locking for cooling, trapping and probing, controllable optical frequency combs, low-power external cavity tunable lasers, quantum computers, sensors and communications, atomic clocks, and tunable ultra-low linewidth lasers and ultra-low phase noise microwave synthesizers.

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5. Observation of topologically protected states at crystalline phase boundaries in single-layer WSe2

   https://doi.org/10.1038/s41467-018-05672-w  

   Ugeda, Miguel M. ; Pulkin, Artem ; Tang, Shujie ; Ryu, Hyejin ; Wu, Quansheng ; Zhang, Yi ; Wong, Dillon ; Pedramrazi, Zahra ; Martín-Recio, Ana ; Chen, Yi ; et al ( August 2018 , Nature Communications)

   Transition metal dichalcogenide materials are unique in the wide variety of structural and electronic phases they exhibit in the two-dimensional limit. Here we show how such polymorphic flexibility can be used to achieve topological states at highly ordered phase boundaries in a new quantum spin Hall insulator (QSHI), 1T′-WSe₂. We observe edge states at the crystallographically aligned interface between a quantum spin Hall insulating domain of 1T′-WSe₂and a semiconducting domain of 1H-WSe₂in contiguous single layers. The QSHI nature of single-layer 1T′-WSe₂is verified using angle-resolved photoemission spectroscopy to determine band inversion around a 120 meV energy gap, as well as scanning tunneling spectroscopy to directly image edge-state formation. Using this edge-state geometry we confirm the predicted penetration depth of one-dimensional interface states into the two-dimensional bulk of a QSHI for a well-specified crystallographic direction. These interfaces create opportunities for testing predictions of the microscopic behavior of topologically protected boundary states.