The polarized photoluminescence from atomically thin transition metal dichalcogenides is a frequently applied tool to scrutinize optical selection rules and valley physics, yet it is known to sensibly depend on a variety of internal and external material and sample properties. In this work, we apply combined angle- and polarization-resolved spectroscopy to explore the interplay of excitonic physics and phenomena arising from the commonly utilized encapsulation procedure on the optical properties of atomically thin
The robust spin and momentum valley locking of electrons in two-dimensional semiconductors makes the valley degree of freedom of great utility for functional optoelectronic devices. Owing to the difference in optical selection rules for the different valleys, these valley electrons can be addressed optically. The electrons and excitons in these materials exhibit the valley Hall effect, where the carriers from specific valleys are directed to different directions under electrical or thermal bias. Here we report the optical analog of valley Hall effect, where the light emission from the valley-polarized excitons in a monolayer
- Award ID(s):
- 1709996
- Publication Date:
- NSF-PAR ID:
- 10209220
- Journal Name:
- Optica
- Volume:
- 8
- Issue:
- 1
- Page Range or eLocation-ID:
- Article No. 50
- ISSN:
- 2334-2536
- Publisher:
- Optical Society of America
- Sponsoring Org:
- National Science Foundation
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