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  • Accepted Manuscript: Marginal metallic state at a fractional filling of ’8/5’ and ’4/3’ of Landau levels in the GaAs/AlGaAs 2D electron system
Title: Marginal metallic state at a fractional filling of ’8/5’ and ’4/3’ of Landau levels in the GaAs/AlGaAs 2D electron system
Abstract A metallic state with a vanishing activation gap, at a filling factor $$\nu = 8/5$$ ν = 8 / 5 in the untilted specimen with $$n= 2 \times 10^{11} cm^{-2}$$ n = 2 × 10 11 c m - 2 , and at $$\nu = 4/3$$ ν = 4 / 3 at $$n=1.2 \times 10^{11} cm^{-2}$$ n = 1.2 × 10 11 c m - 2 under a $$\theta = 66^{0}$$ θ = 66 0 tilted magnetic field, is examined through a microwave photo-excited transport study of the GaAs/AlGaAs 2 dimensional electron system (2DES). The results presented here suggest, remarkably, that at the possible degeneracy point of states with different spin polarization, where the 8/5 or 4/3 FQHE vanish, there occurs a peculiar marginal metallic state that differs qualitatively from a quantum Hall insulating state and the usual quantum Hall metallic state. Such a marginal metallic state occurs most prominently at $$\nu =8/5$$ ν = 8 / 5 , and at $$\nu =4/3$$ ν = 4 / 3 under tilt as mentioned above, over the interval $$1 \le \nu \le 2$$ 1 ≤ ν ≤ 2 , that also includes the $$\nu = 3/2$$ ν = 3 / 2 more » state, which appears perceptibly gapped in the first instance. « less
Authors:
; ; ; ; ;
Award ID(s):
1710302
Publication Date:
NSF-PAR ID:
10294239
Journal Name:
Scientific Reports
Volume:
11
Issue:
1
ISSN:
2045-2322
Sponsoring Org:
National Science Foundation
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