Manipulating fluids by light at the micro/nanoscale has been a long-sought-after goal for lab-on-a-chip applications. Plasmonic heating has been demonstrated to control microfluidic dynamics due to the enhanced and confined light absorption from the intrinsic losses of metals. Dielectrics, the counterpart of metals, has been used to avoid undesired thermal effects due to its negligible light absorption. Here, we report an innovative optofluidic system that leverages a quasi-BIC-driven all-dielectric metasurface to achieve subwavelength scale control of temperature and fluid motion. Our experiments show that suspended particles down to 200 nanometers can be rapidly aggregated to the center of the illuminated metasurface with a velocity of tens of micrometers per second, and up to millimeter-scale particle transport is demonstrated. The strong electromagnetic field enhancement of the quasi-BIC resonance increases the flow velocity up to three times compared with the off-resonant situation by tuning the wavelength within several nanometers range. We also experimentally investigate the dynamics of particle aggregation with respect to laser wavelength and power. A physical model is presented and simulated to elucidate the phenomena and surfactants are added to the nanoparticle colloid to validate the model. Our study demonstrates the application of the recently emerged all-dielectric thermonanophotonics in dealing with functional liquids and opens new frontiers in harnessing non-plasmonic nanophotonics to manipulate microfluidic dynamics. Moreover, the synergistic effects of optofluidics and high-Q all-dielectric nanostructures hold enormous potential in high-sensitivity biosensing applications.
Suppressing material loss in the visible and near-infrared range for functional nanophotonics using bandgap engineering
Abstract All-dielectric nanostructures have recently opened exciting opportunities for functional nanophotonics, owing to their strong optical resonances along with low material loss in the near-infrared range. Pushing these concepts to the visible range is hindered by their larger absorption coefficient, thus encouraging the search for alternative dielectrics for nanophotonics. Here, we employ bandgap engineering to synthesize hydrogenated amorphous Si nanoparticles (a-Si:H NPs) offering ideal features for functional nanophotonics. We observe significant material loss suppression in a-Si:H NPs in the visible range caused by hydrogenation-induced bandgap renormalization, producing strong higher-order resonant modes in single NPs with Q factors up to ~100 in the visible and near-IR range. We also realize highly tunable all-dielectric meta-atoms by coupling a-Si:H NPs to photochromic spiropyran molecules. ~70% reversible all-optical tuning of light scattering at the higher-order resonant mode under a low incident light intensity is demonstrated. Our results promote the development of high-efficiency visible nanophotonic devices.
more »
« less
- NSF-PAR ID:
- 10298662
- Date Published:
- Journal Name:
- Nature Communications
- Volume:
- 11
- Issue:
- 1
- ISSN:
- 2041-1723
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
-
more » « less
Abstract -
more » « less
Abstract High refractive index dielectrics enable nanoscale integration of optical components with practically no absorption loss. Hence, high index dielectrics are promising for many emerging applications in nanophotonics. However, the lack of a complete library of high index dielectric materials poses a significant challenge to understanding the full potential for dielectric nanophotonics. Currently, it is assumed that the absorption edge and the sub‐bandgap refractive index of a semiconductor exhibit a rigid trade‐off, popularly known as the Moss rule. Thus, the Moss rule appears to set an upper limit on the refractive index of a dielectric for a given operating wavelength. However, there are many dielectric materials that surpass the Moss rule, referred to here as super‐Mossian dielectrics. Here, the general features of super‐Mossian dielectrics and their physical origin are discussed to facilitate the search for high index dielectrics. As an example, iron pyrite, an outstanding super‐Mossian material with index nearly 40% higher than the Moss rule prediction, is developed. The local dielectric resonances in iron pyrite nanoresonators are experimentally observed, and the impact of super‐Mossian materials on nanophotonics is demonstrated.
-
Over the two decades, amorphous oxide semiconductors (AOSs) and their thin film transistor (TFT) channel application have been intensely explored to realize high performance, transparent and flexible displays due to their high field effect mobility (μFE=5-20 cm2/Vs), visible range optical transparency, and low temperature processability (25-300 °C).[1-2] The metastable amorphous phase is to be maintained during operation by the addition of Zn and additional third cation species (e.g., Ga, Hf, or Al) as an amorphous phase stabilizer.[3-5] To limit TFT off-state currents, a thin channel layer (10-20 nm) was employed for InZnO (IZO)-based TFTs, or third cations were added to suppress carrier generations in the TFT channel. To resolve bias stress-induced instabilities in TFT performance, approaches to employ defect passivation layers or enhance channel/dielectric interfacial compatibility were demonstrated.[6-7] Metallization contact is also a dominating factor that determines the performance of TFTs. Particularly, it has been reported that high electrical contact resistance significantly sacrifices drain bias applied to the channel, which leads to undesirable power loss during TFT operation and issues for the measurement of TFT field effect mobilities. [2, 8] However, only a few reports that suggest strategies to enhance contact behaviors are available in the literature. Furthermore, the previous approaches (1) require an additional fabrication complexity due to the use of additional treatments at relatively harsh conditions such as UV, plasma, or high temperatures, and (2) may lead to adverse effects on the channel material attributed to the chemical incompatibility between dissimilar materials, and exposures to harsh environments. Therefore, a simple and easy but effective buffer strategy, which does not require any additional process complexities and not sacrifice chemical compatibility, needs to be established to mitigate the contact issues and therefore achieve high performance and low power consumption AOS TFTs. The present study aims to demonstrate an approach utilizing an interfacial buffer layer, which is compositionally homogeneous to the channel to better align work functions between channel and metallization without a significant fabrication complexity and harsh treatment conditions. Photoelectron spectroscopic measurements reveal that the conducting IZO buffer, of which the work function (Φ) is 4.37 eV, relaxes a relatively large Φ difference between channel IZO (Φ=4.81 eV) and Ti (Φ=4.2-4.3 eV) metallization. The buffer is found to lower the energy barrier for charge carriers at the source to reach the effective channel region near the dielectric. In addition, the higher carrier density of the buffer and favorable chemical compatibility with the channel (compositionally the same) further contribute to a significant reduction in specific contact resistance as much as more than 2.5 orders of magnitude. The improved contact and carrier supply performance from the source to the channel lead to an enhanced field effect mobility of up to 56.49 cm2/Vs and a threshold voltage of 1.18 V, compared to 13.41 cm2/Vs and 7.44 V of IZO TFTs without a buffer. The present work is unique in that an approach to lower the potential barrier between the source and the effective channel region (located near the channel/dielectric interface, behaving similar to a buried-channel MOSFET [9]) by introducing a contact buffer layer that enhances the field effect mobility and facilitates carrier supply from the source to the effective channel region.more » « less
-
Delafossite structured ternary nitrides, ABN 2 , have been of recent experimental investigation for applications such as tandem solar and photoelectrochemical cells. We present a thorough first principles computational investigation of their stability, electronic structure, and optical properties. Nine compounds, where A = Cu, Ag, Au and B = V, Nb, Ta, were studied. For three of these compounds, CuTaN 2 , CuNbN 2 , and AgTaN 2 , our computations agree well with experimental results. Optimized lattice parameters, formation energies, and mechanical properties have been computed using the generalized gradient approximation (GGA). Phonon density of states computed at zero-temperature shows that all compounds are dynamically unstable at low temperatures. Including finite-temperature anharmonic effects stabilizes all compounds at 300 K, with the exception of AgVN 2 . Analysis of Crystal Orbital Hamiltonian Populations (COHP) provides insight into the bonding and antibonding characters of A–N and B–N pairs. Instability at low temperatures can be attributed to strong A–N antibonding character near the Fermi energy. B–N bonding is found to be crucial in maintaining stability of the structure. AgVN 2 is the only compound to display significant B–N antibonding below the Fermi energy, as well as the strongest degree of A–N antibonding, both of which provide explanation for the sustained instability of this compound up to 900 K. Hybrid functional calculations of electronic and optical properties show that real static dielectric constants in the semiconductors are related to corresponding band gaps through the Moss relation. CuTaN 2 , CuNbN 2 , AgTaN 2 , AgNbN 2 , AgVN 2 , AuTaN 2 , and AuNbN 2 exhibit indirect electronic band gaps while CuVN 2 and AuVN 2 are metallic. Imaginary parts of the dielectric function are characterized by d–d interband transitions in the semiconductors and d–d intraband transitions in the metals. Four compounds, CuTaN 2 , CuNbN 2 , AgTaN 2 , and AgNbN 2 , are predicted to exhibit large light absorption in the range of 1.0 to 1.7 eV, therefore making these materials good candidates for solar-energy conversion applications. Two compounds, AuTaN 2 and AuNbN 2 , have band gaps and absorption onsets near the ideal range for obtaining high solar-cell conversion efficiency, suggesting that these compounds could become potential candidates as absorber materials in tandem solar cells or for band-gap engineering by alloying.more » « less
-
null (Ed.)A phase transition material, VO 2 , with a semiconductor-to-metal transition (SMT) near 341 K (68 °C) has attracted significant research interest because of drastic changes in its electrical resistivity and optical dielectric properties. To address its application needs at specific temperatures, tunable SMT temperatures are highly desired. In this work, effective transition temperature ( T c ) tuning of VO 2 has been demonstrated via a novel Pt : VO 2 nanocomposite design, i.e. , uniform Pt nanoparticles (NPs) embedded in the VO 2 matrix. Interestingly, a bidirectional tuning has been achieved, i.e. , the transition temperature can be systematically tuned to as low as 329.16 K or as high as 360.74 K, with the average diameter of Pt NPs increasing from 1.56 to 4.26 nm. Optical properties, including transmittance ( T %) and dielectric permittivity ( ε ′) were all effectively tuned accordingly. All Pt : VO 2 nanocomposite thin films maintain reasonable SMT properties, i.e. sharp phase transition and narrow width of thermal hysteresis. The bidirectional T c tuning is attributed to two factors: the reconstruction of the band structure at the Pt : VO 2 interface and the change of the Pt : VO 2 phase boundary density. This demonstration sheds light on phase transition tuning of VO 2 at both room temperature and high temperature, which provides a promising approach for VO 2 -based novel electronics and photonics operating under specific temperatures.more » « less
- Free Publicly Accessible Full Text
-
Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.1038/s41467-020-18793-y
