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1. A Non-Reciprocal Surface Acoustic Wave Filter Based on Asymmetrical Delay Lines and Parametric Interactions

   https://doi.org/10.1109/MEMS46641.2020.9056343  

   Bahamonde, Jose A. ; Kymissis, Ioannis ( January 2020 , 2020 IEEE 33rd International Conference on Micro Electro Mechanical Systems (MEMS))

   Acoustic devices have played a major role in telecommunications for decades as the leading technology for filtering in RF and microwave frequencies. While filter requirements for insertion loss and bandwidth become more stringent, more functionality is desired for many applications to improve overall system level performance. For instance, a filter with non-reciprocal transmission can minimize losses due to mismatch and protect the source from reflections while also performing its filtering duties. A device such as this one was originally researched by scientists decades ago. These devices were based on the acoustoelectric effect where surface acoustic waves (SAW) traveling in themore »same direction are as drift carriers in a nearby semiconductor are amplified. While several experiments were successfully demonstrated in [1], [2], [3]. these devices suffered from extremely high operating electric fields and noise figure [4], [5]. In the past few years, new techniques have been developed for implementing non-reciprocal devices such as isolators and circulators without utilizing magnetic materials [6], [7], [8], [9]. The most popular technique has been spatio-temporal modulation (STM) where commutated clock signals synchronized with delay elements result in non-reciprocal transmission through the network. STM has also been adapted by researchers to create non-reciprocal filters. The work in [10] utilizes 4 clocks signals to obtain a non-reciprocal filter with an insertion loss of -6.6 dB an isolation of 25.4 dB. Another filter demonstrated in [11] utilizes 6 synchronized clock signals to obtain a non-reciprocal filter with an insertion loss of -5.6 dB and an Isolation of 20 dB. In this work, a novel non-reciprocal topology is explored with the use of only one modulation signal. The design is based on asymmetrical SAW delay lines with a parametric amplifier. The device can operate in two different modes: phase coherent mode and phase incoherent mode. In phase coherent mode, the device is capable of over +12 dB of gain and 20.2 dB of isolation. A unique feature of this mode is that the phase of the pump signal can be utilized to tune the frequency response of the filter. Under the phase-incoherent mode, the pump frequency remains constant and the device behaves as a normal filter with non-reciprocal transmission exhibiting over +7 dB of gain and 17.33 dB of isolation. While the tuning capability is lost in this mode, phase-coherence is no longer necessary so the device can be utilized in most filtering applications.« less
2. Transmitted, Reflected, and Converted Modes of Seismic Precursors to Shear Failure of Rock Discontinuities

   El Fil, H. ; Pyrak-Nolte, L.J. ; Bobet, A. ( July 2021 , 55th US Rock Mechanics/Geomechanics Symposium)

   The failure of rock along pre-existing discontinuities is a major concern when building structures on or in rock. A goal is to develop methodologies to identify signatures of imminent shear failure along discontinuities to enable implementation of measures to prevent the collapse of a structure. Previous studies identified precursory seismic signatures of shear failure along rock discontinuities in transmitted and reflected signals. Here, laboratory direct shear experiments were conducted on idealized saw-tooth discontinuities in gypsum to determine the differences or similarities in precursors observed in transmitted, reflected and converted elastic waves. Digital Image Correlation (DIC) was used to quantify themore »vertical and horizontal displacements along the discontinuity during shearing to relate the location and magnitude of slip with the measured wave amplitudes. Results from the experiments showed that seismic precursors to failure appeared as maxima in the transmitted wave amplitude and conversely as minima in the reflected amplitudes. Converted waves (S to P & P to S) were also detected and their amplitudes reached a maximum prior to shear failure. DIC results showed that slip occurred first at the top of the specimen, where the load was applied, and then progressed along the joint as the shear stress increased. This process was consistent with the precursors i.e., precursors were first recorded near the top and later at the center and finally at the bottom of the specimen. Interestingly, precursors from reflected waves were observed first, followed by precursors from transmitted and then by converted waves. Also, the differences in time of occurrence between the three precursor modes decreased along the plane of the discontinuity. The results showed that reflected waves were the most sensitive to damage and slip along a discontinuity and that monitoring for precursors may provide a method for detecting impending failure.« less
3. Nonlinear magnetoelectric effects in Al-substituted strontium hexaferrite

   https://doi.org/10.1038/s41598-021-88203-w  

   Liu, Ying ; Popov, Maksym ; Zavislyak, Igor ; Qu, Hongwei ; Zhang, T. ; Zhang, Jitao ; Page, M. R. ; Balbashov, A. M. ; Srinivasan, G. ( April 2021 , Scientific Reports)

   This report is on the observation and theory of electric fieldEinduced non-linear magnetoelectric (NLME) effects in single crystal platelets of ferrimagnetic M-type strontium aluminum hexagonal ferrite. Using microwave measurement techniques, it was found that a DC electric field along the hexagonal c-axis results in significant changes in the saturation magnetization and uniaxial magneto-crystalline anisotropy field and these changes are proportional to the square of the applied static electric field. The NLME effects were present with or without an external bias magnetic field. TheE-induced variation in magnetic order parameters is attributed to weakening of magnetic exchange and spin–orbit interactions sincemore »conduction electrons in the ferrite are effectively excluded from both interactions while being in transit from one Fe ion to another. We present a phenomenological theory which considers magneto-bielectric effects characterized by a quadratic term in electric fieldEin the free energy density. The coefficients for the NLME coupling terms have been calculated from experimental data and they do show variations with the Al substitution level and the largest rates of change of the saturation magnetization and anisotropy constant change with the applied power were observed for x = 0.4. It was also clear from the study that strength of the NLME effect does not depend on the amount Al substitution, but critically depends on the electrical conductivity of the sample with the highest NLME coefficients estimated for the sample with the highest conductivity. Results of this work are of importance for a new family of electric field tunable, miniature, high frequency ferrite devices.

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4. Rotated Spectral Principal Component Analysis (rsPCA) for Identifying Dynamical Modes of Variability in Climate Systems

   https://doi.org/10.1175/JCLI-D-20-0266.1  

   Guilloteau, Clément ; Mamalakis, Antonios ; Vulis, Lawrence ; Le, Phong V. ; Georgiou, Tryphon T. ; Foufoula-Georgiou, Efi ( January 2021 , Journal of Climate)

   Abstract Spectral PCA (sPCA), in contrast to classical PCA, offers the advantage of identifying organized spatiotemporal patterns within specific frequency bands and extracting dynamical modes. However, the unavoidable trade-off between frequency resolution and robustness of the PCs leads to high sensitivity to noise and overfitting, which limits the interpretation of the sPCA results. We propose herein a simple nonparametric implementation of sPCA using the continuous analytic Morlet wavelet as a robust estimator of the cross-spectral matrices with good frequency resolution. To improve the interpretability of the results, especially when several modes of similar amplitude exist within the same frequency band,more »we propose a rotation of the complex-valued eigenvectors to optimize their spatial regularity (smoothness). The developed method, called rotated spectral PCA (rsPCA), is tested on synthetic data simulating propagating waves and shows impressive performance even with high levels of noise in the data. Applied to global historical geopotential height (GPH) and sea surface temperature (SST) daily time series, the method accurately captures patterns of atmospheric Rossby waves at high frequencies (3–60-day periods) in both GPH and SST and El Niño–Southern Oscillation (ENSO) at low frequencies (2–7-yr periodicity) in SST. At high frequencies the rsPCA successfully unmixes the identified waves, revealing spatially coherent patterns with robust propagation dynamics.« less
5. RTD Light Emission around 1550 nm with IQE up to 6% at 300 K

   https://doi.org/10.1109/DRC50226.2020.9135175  

   Brown, E. R. ; Zhang, W-D. ; Fakhimi, P. ; Growden, T. A. ; Berger, P.R. ( June 2020 , IEEE Device Research Conference (DRC), Columbus, OH (June 22-24, 2020))

   Resonant tunneling diodes (RTDs) have come full-circle in the past 10 years after their demonstration in the early 1990s as the fastest room-temperature semiconductor oscillator, displaying experimental results up to 712 GHz and fmax values exceeding 1.0 THz [1]. Now the RTD is once again the preeminent electronic oscillator above 1.0 THz and is being implemented as a coherent source [2] and a self-oscillating mixer [3], amongst other applications. This paper concerns RTD electroluminescence – an effect that has been studied very little in the past 30+ years of RTD development, and not at room temperature. We present experiments andmore »modeling of an n-type In0.53Ga0.47As/AlAs double-barrier RTD operating as a cross-gap light emitter at ~300K. The MBE-growth stack is shown in Fig. 1(a). A 15-μm-diam-mesa device was defined by standard planar processing including a top annular ohmic contact with a 5-μm-diam pinhole in the center to couple out enough of the internal emission for accurate free-space power measurements [4]. The emission spectra have the behavior displayed in Fig. 1(b), parameterized by bias voltage (VB). The long wavelength emission edge is at  = 1684 nm - close to the In0.53Ga0.47As bandgap energy of Ug ≈ 0.75 eV at 300 K. The spectral peaks for VB = 2.8 and 3.0 V both occur around  = 1550 nm (h = 0.75 eV), so blue-shifted relative to the peak of the “ideal”, bulk InGaAs emission spectrum shown in Fig. 1(b) [5]. These results are consistent with the model displayed in Fig. 1(c), whereby the broad emission peak is attributed to the radiative recombination between electrons accumulated on the emitter side, and holes generated on the emitter side by interband tunneling with current density Jinter. The blue-shifted main peak is attributed to the quantum-size effect on the emitter side, which creates a radiative recombination rate RN,2 comparable to the band-edge cross-gap rate RN,1. Further support for this model is provided by the shorter wavelength and weaker emission peak shown in Fig. 1(b) around = 1148 nm. Our quantum mechanical calculations attribute this to radiative recombination RR,3 in the RTD quantum well between the electron ground-state level E1,e, and the hole level E1,h. To further test the model and estimate quantum efficiencies, we conducted optical power measurements using a large-area Ge photodiode located ≈3 mm away from the RTD pinhole, and having spectral response between 800 and 1800 nm with a peak responsivity of ≈0.85 A/W at  =1550 nm. Simultaneous I-V and L-V plots were obtained and are plotted in Fig. 2(a) with positive bias on the top contact (emitter on the bottom). The I-V curve displays a pronounced NDR region having a current peak-to-valley current ratio of 10.7 (typical for In0.53Ga0.47As RTDs). The external quantum efficiency (EQE) was calculated from EQE = e∙IP/(∙IE∙h) where IP is the photodiode dc current and IE the RTD current. The plot of EQE is shown in Fig. 2(b) where we see a very rapid rise with VB, but a maximum value (at VB= 3.0 V) of only ≈2×10-5. To extract the internal quantum efficiency (IQE), we use the expression EQE= c ∙i ∙r ≡ c∙IQE where ci, and r are the optical-coupling, electrical-injection, and radiative recombination efficiencies, respectively [6]. Our separate optical calculations yield c≈3.4×10-4 (limited primarily by the small pinhole) from which we obtain the curve of IQE plotted in Fig. 2(b) (right-hand scale). The maximum value of IQE (again at VB = 3.0 V) is 6.0%. From the implicit definition of IQE in terms of i and r given above, and the fact that the recombination efficiency in In0.53Ga0.47As is likely limited by Auger scattering, this result for IQE suggests that i might be significantly high. To estimate i, we have used the experimental total current of Fig. 2(a), the Kane two-band model of interband tunneling [7] computed in conjunction with a solution to Poisson’s equation across the entire structure, and a rate-equation model of Auger recombination on the emitter side [6] assuming a free-electron density of 2×1018 cm3. We focus on the high-bias regime above VB = 2.5 V of Fig. 2(a) where most of the interband tunneling should occur in the depletion region on the collector side [Jinter,2 in Fig. 1(c)]. And because of the high-quality of the InGaAs/AlAs heterostructure (very few traps or deep levels), most of the holes should reach the emitter side by some combination of drift, diffusion, and tunneling through the valence-band double barriers (Type-I offset) between InGaAs and AlAs. The computed interband current density Jinter is shown in Fig. 3(a) along with the total current density Jtot. At the maximum Jinter (at VB=3.0 V) of 7.4×102 A/cm2, we get i = Jinter/Jtot = 0.18, which is surprisingly high considering there is no p-type doping in the device. When combined with the Auger-limited r of 0.41 and c ≈ 3.4×10-4, we find a model value of IQE = 7.4% in good agreement with experiment. This leads to the model values for EQE plotted in Fig. 2(b) - also in good agreement with experiment. Finally, we address the high Jinter and consider a possible universal nature of the light-emission mechanism. Fig. 3(b) shows the tunneling probability T according to the Kane two-band model in the three materials, In0.53Ga0.47As, GaAs, and GaN, following our observation of a similar electroluminescence mechanism in GaN/AlN RTDs (due to strong polarization field of wurtzite structures) [8]. The expression is Tinter = (2/9)∙exp[(-2 ∙Ug 2 ∙me)/(2h∙P∙E)], where Ug is the bandgap energy, P is the valence-to-conduction-band momentum matrix element, and E is the electric field. Values for the highest calculated internal E fields for the InGaAs and GaN are also shown, indicating that Tinter in those structures approaches values of ~10-5. As shown, a GaAs RTD would require an internal field of ~6×105 V/cm, which is rarely realized in standard GaAs RTDs, perhaps explaining why there have been few if any reports of room-temperature electroluminescence in the GaAs devices. [1] E.R. Brown,et al., Appl. Phys. Lett., vol. 58, 2291, 1991. [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [2] M. Feiginov et al., Appl. Phys. Lett., 99, 233506, 2011. [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [3] Y. Nishida et al., Nature Sci. Reports, 9, 18125, 2019. [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [4] P. Fakhimi, et al., 2019 DRC Conference Digest. [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018). [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018).« less