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Title: Resonant amplification of intrinsic magnon modes and generation of new extrinsic modes in a two-dimensional array of interacting multiferroic nanomagnets by surface acoustic waves
Using time-resolved magneto-optical Kerr effect (TR-MOKE) microscopy, we demonstrate surface-acoustic-wave (SAW) induced resonant amplification of intrinsic spin-wave (SW) modes, as well as generation of new extrinsic or driven modes at the SAW frequency, in a densely packed two-dimensional array of elliptical Co nanomagnets fabricated on a piezoelectric LiNbO 3 substrate. This system can efficiently serve as a magnonic crystal (MC), where the intrinsic shape anisotropy and the strong inter-element magnetostatic interaction trigger the incoherent precession of the nanomagnets' magnetization in the absence of any bias magnetic field, giving rise to the ‘intrinsic’ SW modes. The magnetoelastic coupling leads to a rich variety of SW phenomena when the SAW is launched along the major axis of the nanomagnets, such as 4–7 times amplification of intrinsic modes (at 3, 4, 7 and 10 GHz) when the applied SAW frequencies are resonant with these frequencies, and the generation of new extrinsic modes at non-resonant SAW frequencies. However, when the SAW is launched along the minor axis, a dominant driven mode appears at the applied SAW frequency. This reveals that the magnetoelastic coupling between SW and SAW is anisotropic in nature. Micromagnetic simulation results are in qualitative agreement with the experimental observations and elucidate more » the underlying dynamics. Our findings lay the groundwork for bias-field free magnonics, where the SW behavior is efficiently tuned by SAWs. It has important applications in the design of energy efficient on-chip microwave devices, SW logic, and extreme sub-wavelength ultra-miniaturized microwave antennas for embedded applications. « less
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Award ID(s):
1815033 2006843
Publication Date:
Journal Name:
Page Range or eLocation-ID:
10016 to 10023
Sponsoring Org:
National Science Foundation
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Fig. 3(b) shows the tunneling probability T according to the Kane two-band model in the three materials, In0.53Ga0.47As, GaAs, and GaN, following our observation of a similar electroluminescence mechanism in GaN/AlN RTDs (due to strong polarization field of wurtzite structures) [8]. The expression is Tinter = (2/9)∙exp[(-2 ∙Ug 2 ∙me)/(2h∙P∙E)], where Ug is the bandgap energy, P is the valence-to-conduction-band momentum matrix element, and E is the electric field. Values for the highest calculated internal E fields for the InGaAs and GaN are also shown, indicating that Tinter in those structures approaches values of ~10-5. As shown, a GaAs RTD would require an internal field of ~6×105 V/cm, which is rarely realized in standard GaAs RTDs, perhaps explaining why there have been few if any reports of room-temperature electroluminescence in the GaAs devices. [1] E.R. Brown,et al., Appl. Phys. Lett., vol. 58, 2291, 1991. [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [2] M. Feiginov et al., Appl. Phys. Lett., 99, 233506, 2011. [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [3] Y. Nishida et al., Nature Sci. Reports, 9, 18125, 2019. [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [4] P. Fakhimi, et al., 2019 DRC Conference Digest. [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018). [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018).« less