Zaslavsky, A., Richter, C. A., Shrestha, P. R., Hoskins, B. D., Le, S. T., Madhavan, A., and McClelland, J. J. Impact ionization-induced bistability in CMOS transistors at cryogenic temperatures for capacitorless memory applications. Retrieved from https://par.nsf.gov/biblio/10300987. Applied Physics Letters 119.4 Web. doi:10.1063/5.0060343.

Zaslavsky, A., Richter, C. A., Shrestha, P. R., Hoskins, B. D., Le, S. T., Madhavan, A., & McClelland, J. J. Impact ionization-induced bistability in CMOS transistors at cryogenic temperatures for capacitorless memory applications. Applied Physics Letters, 119 (4). Retrieved from https://par.nsf.gov/biblio/10300987. https://doi.org/10.1063/5.0060343

Zaslavsky, A., Richter, C. A., Shrestha, P. R., Hoskins, B. D., Le, S. T., Madhavan, A., and McClelland, J. J. "Impact ionization-induced bistability in CMOS transistors at cryogenic temperatures for capacitorless memory applications". Applied Physics Letters 119 (4). Country unknown/Code not available. https://doi.org/10.1063/5.0060343. https://par.nsf.gov/biblio/10300987.

@article{osti_10300987,
place = {Country unknown/Code not available}, title = {Impact ionization-induced bistability in CMOS transistors at cryogenic temperatures for capacitorless memory applications}, url = {https://par.nsf.gov/biblio/10300987}, DOI = {10.1063/5.0060343}, abstractNote = {}, journal = {Applied Physics Letters}, volume = {119}, number = {4}, author = {Zaslavsky, A. and Richter, C. A. and Shrestha, P. R. and Hoskins, B. D. and Le, S. T. and Madhavan, A. and McClelland, J. J.}, editor = {null} }