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1. Control of electron dynamics, radical and metastable species generation in atmospheric pressure RF plasma jets by Voltage Waveform Tailoring

   https://doi.org/10.1088/1361-6595/ab38ea  

   Korolov, I. ; Donkó, Z. ; Hübner, G. ; Bischoff, L. ; Hartmann, P. ; Gans, T. ; Liu, Y. ; Mussenbrock, T. ; Schulze, J. ( September 2019 , Plasma Sources Science and Technology)

   Atmospheric pressure capacitively coupled radio frequency discharges operated in He/N₂mixtures and driven by tailored voltage waveforms are investigated experimentally using a COST microplasma reference jet and by means of kinetic simulations as a function of the reactive gas admixture and the number of consecutive harmonics used to drive the plasma. Pulse-type ‘peaks’-waveforms, that consist of up to four consecutive harmonics of the fundamental frequency (f = 13.56 MHz), are used at a fixed peak-to-peak voltage of 400 V. Based on an excellent agreement between experimental and simulation results with respect to the DC self-bias and the spatio-temporal electron impact excitation dynamics, we demonstrate that Voltage Waveform Tailoring allows for the control of the dynamics of energetic electrons, the electron energy distribution function in distinct spatio-temporal regions of interest, and, thus, the generation of atomic nitrogen as well as helium metastables, which are highly relevant for a variety of technological and biomedical applications. By tuning the number of driving frequencies and the reactive gas admixture, the generation of these important species can be optimised. The behaviour of the DC self-bias, which is different compared to that in low pressure capacitive radio frequency plasmas, is understood based on an analytical model.

    

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2. 2D-imaging of absolute OH and H 2 O 2 profiles in a He–H 2 O nanosecond pulsed dielectric barrier discharge by photo-fragmentation laser-induced fluorescence

   https://doi.org/10.1088/1361-6595/acaa53  

   van den Bekerom, Dirk ; Tahiyat, Malik M ; Huang, Erxiong ; Frank, Jonathan H ; Farouk, Tanvir I ( January 2023 , Plasma Sources Science and Technology)

   Abstract Pulsed dielectric barrier discharges (DBD) in He–H 2 O and He–H 2 O–O 2 mixtures are studied in near atmospheric conditions using temporally and spatially resolved quantitative 2D imaging of the hydroxyl radical (OH) and hydrogen peroxide (H 2 O 2 ). The primary goal was to detect and quantify the production of these strongly oxidative species in water-laden helium discharges in a DBD jet configuration, which is of interest for biomedical applications such as disinfection of surfaces and treatment of biological samples. Hydroxyl profiles are obtained by laser-induced fluorescence (LIF) measurements using 282 nm laser excitation. Hydrogen peroxide profiles are measured by photo-fragmentation LIF (PF-LIF), which involves photo-dissociating H 2 O 2 into OH with a 212.8 nm laser sheet and detecting the OH fragments by LIF. The H 2 O 2 profiles are calibrated by measuring PF-LIF profiles in a reference mixture of He seeded with a known amount of H 2 O 2 . OH profiles are calibrated by measuring OH-radical decay times and comparing these with predictions from a chemical kinetics model. Two different burst discharge modes with five and ten pulses per burst are studied, both with a burst repetition rate of 50 Hz. In both cases, dynamics of OH and H 2 O 2 distributions in the afterglow of the discharge are investigated. Gas temperatures determined from the OH-LIF spectra indicate that gas heating due to the plasma is insignificant. The addition of 5% O 2 in the He admixture decreases the OH densities and increases the H 2 O 2 densities. The increased coupled energy in the ten-pulse discharge increases OH and H 2 O 2 mole fractions, except for the H 2 O 2 in the He–H 2 O–O 2 mixture which is relatively insensitive to the additional pulses. 

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3. The Maximum Mass-loss Efficiency for a Photoionization-driven Isothermal Parker Wind

   https://doi.org/10.3847/1538-4357/ac4e8a  

   Vissapragada, Shreyas ; Knutson, Heather A. ; dos Santos, Leonardo A. ; Wang, Lile ; Dai, Fei ( March 2022 , The Astrophysical Journal)

   Observations of present-day mass-loss rates for close-in transiting exoplanets provide a crucial check on models of planetary evolution. One common approach is to model the planetary absorption signal during the transit in lines like Hei10830 with an isothermal Parker wind, but this leads to a degeneracy between the assumed outflow temperatureT₀and the mass-loss rate$\dot{M}$that can span orders of magnitude in$\dot{M}$. In this study, we re-examine the isothermal Parker wind model using an energy-limited framework. We show that in cases where photoionization is the only heat source, there is a physical upper limit to the efficiency parameterεcorresponding to the maximal amount of heating. This allows us to rule out a subset of winds with high temperatures and large mass-loss rates as they do not generate enough heat to remain self-consistent. To demonstrate the utility of this framework, we consider spectrally unresolved metastable helium observations of HAT-P-11b, WASP-69b, and HAT-P-18b. For the former two planets, we find that only relatively weak ($\dot{M}\lesssim {10}^{11.5}$g s⁻¹) outflows can match the metastable helium observations while remaining energetically self-consistent, while for HAT-P-18b all of the Parker wind models matching the helium data are self-consistent. Our results are in good agreement with more detailed self-consistent simulations and constraints from high-resolution transit spectra.

    

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4. Influence of liquid conductance on the temporal evolution of self-organization patterns in atmospheric pressure DC glow discharges

   https://doi.org/10.1088/1402-4896/aceb1c  

   Ghimire, Bhagirath ; Kolobov, Vladimir I ; Xu, Kunning G ( August 2023 , Physica Scripta)

   Abstract Self-Organized Patterns (SOPs) at plasma-liquid interface in atmospheric pressure plasma discharges refer to the formation of intricate and puzzling structures due to the interplay of electrodynamic and hydrodynamic processes. Studies conducted to date have shown that this phenomenon results in the formation of distinctive patterns such as circular ring, star, gear, dots, spikes, etc., and primarily depends on working gas, electrolyte type, gap distance, current, conductivity, etc. However, an adequate understanding of how these patterns change from one type to another is still not available. This study aims to elucidate the influence of initial liquid conductance ( σ i ) on the temporal evolution of SOPs in liquid-anode discharges. The discharge was generated in a pin-to-liquid anode configuration at a constant helium (He) flow rate of 500 sccm and DC applied voltage of 6 kV at a gap distance of 12 mm. Through the gradual increment of σ i from 1.8 μ S to 4820 μ S, we observe that the trend in the evolution of SOPS takes place as solid discs, spikes, dots, rings, double rings, and stars. The continuous formation of reactive species onto the liquid anode in all conductive solutions results in a decrease in pH, an increase in bulk liquid temperature, and an increase in total dissolved solutes, and these have been confirmed through experimental measurements. Observations using optical emission spectroscopy show that the electrons at the plasma-liquid interface participate in the reduction of cations followed by their excitation & ionization due to which electron density as well as emissions from excited species (mainly hydroxyl radicals & excited nitrogen) decrease with time. Our investigation provides experimental evidence on the presence of cations at the plasma-liquid interface required for SOP formation. 

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5. RTD Light Emission around 1550 nm with IQE up to 6% at 300 K

   https://doi.org/10.1109/DRC50226.2020.9135175  

   Brown, E. R. ; Zhang, W-D. ; Fakhimi, P. ; Growden, T. A. ; Berger, P.R. ( June 2020 , IEEE Device Research Conference (DRC), Columbus, OH (June 22-24, 2020))

   Resonant tunneling diodes (RTDs) have come full-circle in the past 10 years after their demonstration in the early 1990s as the fastest room-temperature semiconductor oscillator, displaying experimental results up to 712 GHz and fmax values exceeding 1.0 THz [1]. Now the RTD is once again the preeminent electronic oscillator above 1.0 THz and is being implemented as a coherent source [2] and a self-oscillating mixer [3], amongst other applications. This paper concerns RTD electroluminescence – an effect that has been studied very little in the past 30+ years of RTD development, and not at room temperature. We present experiments and modeling of an n-type In0.53Ga0.47As/AlAs double-barrier RTD operating as a cross-gap light emitter at ~300K. The MBE-growth stack is shown in Fig. 1(a). A 15-μm-diam-mesa device was defined by standard planar processing including a top annular ohmic contact with a 5-μm-diam pinhole in the center to couple out enough of the internal emission for accurate free-space power measurements [4]. The emission spectra have the behavior displayed in Fig. 1(b), parameterized by bias voltage (VB). The long wavelength emission edge is at  = 1684 nm - close to the In0.53Ga0.47As bandgap energy of Ug ≈ 0.75 eV at 300 K. The spectral peaks for VB = 2.8 and 3.0 V both occur around  = 1550 nm (h = 0.75 eV), so blue-shifted relative to the peak of the “ideal”, bulk InGaAs emission spectrum shown in Fig. 1(b) [5]. These results are consistent with the model displayed in Fig. 1(c), whereby the broad emission peak is attributed to the radiative recombination between electrons accumulated on the emitter side, and holes generated on the emitter side by interband tunneling with current density Jinter. The blue-shifted main peak is attributed to the quantum-size effect on the emitter side, which creates a radiative recombination rate RN,2 comparable to the band-edge cross-gap rate RN,1. Further support for this model is provided by the shorter wavelength and weaker emission peak shown in Fig. 1(b) around = 1148 nm. Our quantum mechanical calculations attribute this to radiative recombination RR,3 in the RTD quantum well between the electron ground-state level E1,e, and the hole level E1,h. To further test the model and estimate quantum efficiencies, we conducted optical power measurements using a large-area Ge photodiode located ≈3 mm away from the RTD pinhole, and having spectral response between 800 and 1800 nm with a peak responsivity of ≈0.85 A/W at  =1550 nm. Simultaneous I-V and L-V plots were obtained and are plotted in Fig. 2(a) with positive bias on the top contact (emitter on the bottom). The I-V curve displays a pronounced NDR region having a current peak-to-valley current ratio of 10.7 (typical for In0.53Ga0.47As RTDs). The external quantum efficiency (EQE) was calculated from EQE = e∙IP/(∙IE∙h) where IP is the photodiode dc current and IE the RTD current. The plot of EQE is shown in Fig. 2(b) where we see a very rapid rise with VB, but a maximum value (at VB= 3.0 V) of only ≈2×10-5. To extract the internal quantum efficiency (IQE), we use the expression EQE= c ∙i ∙r ≡ c∙IQE where ci, and r are the optical-coupling, electrical-injection, and radiative recombination efficiencies, respectively [6]. Our separate optical calculations yield c≈3.4×10-4 (limited primarily by the small pinhole) from which we obtain the curve of IQE plotted in Fig. 2(b) (right-hand scale). The maximum value of IQE (again at VB = 3.0 V) is 6.0%. From the implicit definition of IQE in terms of i and r given above, and the fact that the recombination efficiency in In0.53Ga0.47As is likely limited by Auger scattering, this result for IQE suggests that i might be significantly high. To estimate i, we have used the experimental total current of Fig. 2(a), the Kane two-band model of interband tunneling [7] computed in conjunction with a solution to Poisson’s equation across the entire structure, and a rate-equation model of Auger recombination on the emitter side [6] assuming a free-electron density of 2×1018 cm3. We focus on the high-bias regime above VB = 2.5 V of Fig. 2(a) where most of the interband tunneling should occur in the depletion region on the collector side [Jinter,2 in Fig. 1(c)]. And because of the high-quality of the InGaAs/AlAs heterostructure (very few traps or deep levels), most of the holes should reach the emitter side by some combination of drift, diffusion, and tunneling through the valence-band double barriers (Type-I offset) between InGaAs and AlAs. The computed interband current density Jinter is shown in Fig. 3(a) along with the total current density Jtot. At the maximum Jinter (at VB=3.0 V) of 7.4×102 A/cm2, we get i = Jinter/Jtot = 0.18, which is surprisingly high considering there is no p-type doping in the device. When combined with the Auger-limited r of 0.41 and c ≈ 3.4×10-4, we find a model value of IQE = 7.4% in good agreement with experiment. This leads to the model values for EQE plotted in Fig. 2(b) - also in good agreement with experiment. Finally, we address the high Jinter and consider a possible universal nature of the light-emission mechanism. Fig. 3(b) shows the tunneling probability T according to the Kane two-band model in the three materials, In0.53Ga0.47As, GaAs, and GaN, following our observation of a similar electroluminescence mechanism in GaN/AlN RTDs (due to strong polarization field of wurtzite structures) [8]. The expression is Tinter = (2/9)∙exp[(-2 ∙Ug 2 ∙me)/(2h∙P∙E)], where Ug is the bandgap energy, P is the valence-to-conduction-band momentum matrix element, and E is the electric field. Values for the highest calculated internal E fields for the InGaAs and GaN are also shown, indicating that Tinter in those structures approaches values of ~10-5. As shown, a GaAs RTD would require an internal field of ~6×105 V/cm, which is rarely realized in standard GaAs RTDs, perhaps explaining why there have been few if any reports of room-temperature electroluminescence in the GaAs devices. [1] E.R. Brown,et al., Appl. Phys. Lett., vol. 58, 2291, 1991. [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [2] M. Feiginov et al., Appl. Phys. Lett., 99, 233506, 2011. [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [3] Y. Nishida et al., Nature Sci. Reports, 9, 18125, 2019. [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [4] P. Fakhimi, et al., 2019 DRC Conference Digest. [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018). [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018). 

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