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Title: Effect of Electron Injection on Minority Carrier Transport in 10 MeV Proton Irradiated β-Ga 2 O 3 Schottky Rectifiers

We report the effect of extended duration electron beam exposure on the minority carrier transport properties of 10 MeV proton irradiated (fluence ∼1014cm−2) Si-dopedβ-Ga2O3Schottky rectifiers. The diffusion length (L) of minority carriers is found to decrease with temperature from 330 nm at 21 °C to 289 nm at 120 °C, with an activation energy of ∼26 meV. This energy corresponds to the presence of shallow Si trap-levels. Extended duration electron beam exposure enhancesLfrom 330 nm to 726 nm at room temperature. The rate of increase forLis lower with increased temperature, with an activation energy of 43 meV. Finally, a brief comparison of the effect of electron injection on proton irradiated, alpha-particle irradiated and a reference Si-dopedβ-Ga2O3Schottky rectifiers is presented.

 
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Award ID(s):
1802208
NSF-PAR ID:
10303349
Author(s) / Creator(s):
; ; ; ; ; ; ;
Publisher / Repository:
The Electrochemical Society
Date Published:
Journal Name:
ECS Journal of Solid State Science and Technology
Volume:
9
Issue:
4
ISSN:
2162-8769
Page Range / eLocation ID:
Article No. 045018
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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