Neutrons generated through charge-exchange9Be (p; ni)9Be reactions, with energies ranging from 0–33 MeV and an average energy of ∼9.8 MeV were used to irradiate conventional Schottky Ga2O3rectifiers and NiO/Ga2O3p-n heterojunction rectifiers to fluences of 1.1–2.2 × 1014cm−2. The breakdown voltage was improved after irradiation for the Schottky rectifiers but was highly degraded for their NiO/Ga2O3counterparts. This may be a result of extended defect zones within the NiO. After irradiation, the switching characteristics were degraded and irradiated samples of both types could not survive switching above 0.7 A or 400 V, whereas reference samples were robust to 1 A and 1 kV. The carrier removal rate in both types of devices was ∼45 cm−1. The forward currents and on-state resistances were only slightly degraded by neutron irradiation.
We report the effect of extended duration electron beam exposure on the minority carrier transport properties of 10 MeV proton irradiated (fluence ∼1014cm−2) Si-doped
- Award ID(s):
- 1802208
- NSF-PAR ID:
- 10303349
- Publisher / Repository:
- The Electrochemical Society
- Date Published:
- Journal Name:
- ECS Journal of Solid State Science and Technology
- Volume:
- 9
- Issue:
- 4
- ISSN:
- 2162-8769
- Page Range / eLocation ID:
- Article No. 045018
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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