Optical properties of InGaN/GaN multi-quantum-well (MQWs) grown on sapphire and on Si(111) are reported. The tensile strain in the MQW on Si is shown to be beneficial for indium incorporation and Quantum-confined Stark Effect reduction in the multi-quantum wells. Raman spectroscopy reveals compressive strains of -0.107% in MQW on sapphire and tensile strain of +0.088% in MQW on Si. Temperature-dependent photoluminescence shows in MQW on sapphire a strong (30 meV peak-to-peak) S-shaped wavelength shift with decreasing temperature (6 K to 300K), whereas MQW on Si luminescence wavelength is stable and red-shifts monotonically. Micro-photoluminescence mapping over 200 by 200 μm2 shows the emission wavelength spatial uniformity of MQW on Si is 2.6 times higher than MQW on sapphire, possibly due to a more uniform indium incorporation in the multi-quantum-wells as a result of the tensile strain in MQW on Si. A positive correlation between emission energy and intensity is observed in MQW on sapphire but not in those on Si. Despite the lower crystal quality of MQW on Si revealed by atomic force microscopy, it exhibits a higher internal quantum efficiency (IQE) than MQW on sapphire from 6 K to 250 K, and equalizes at 300 K. Overall, MQW on Si exhibits a high IQE, higher wavelength spatial uniformity and temperature stability, while providing a much more scalable platform than MQW on sapphire for next generation integrated photonics.
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Gender Disparities in Pandemic Productivity
This article describes the disparities, by gender, in ability to produce research in physics during the Covid pandemic. Data from the APS Office of Governmental affairs sheds light on the particular burden placed on experimentalists and early career women. An annotated list of references is included.
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- Award ID(s):
- 1905474
- PAR ID:
- 10303553
- Editor(s):
- Graves, A.L.
- Date Published:
- Journal Name:
- CSWP COM gazette
- Volume:
- 40
- Issue:
- 1
- ISSN:
- 2327-0098
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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