skip to main content


Title: Controlling thermoelectric transport via native defects in the diamond-like semiconductors Cu 2 HgGeTe 4 and Hg 2 GeTe 4
Diamond like semiconductors (DLS) have emerged as candidates for thermoelectric energy conversion. Towards understanding and optimizing performance, we present a comprehensive investigation of the electronic properties of two DLS phases, quaternary Cu 2 HgGeTe 4 and related ordered vacancy compound Hg 2 GeTe 4 , including thermodynamic stability, defect chemistry, and transport properties. To establish the thermodynamic link between the related but distinct phases, the stability region for both is visualized in chemical potential space. In spite of their similar structure and bonding, we show that the two materials exhibit reciprocal behaviors for dopability. Cu 2 HgGeTe 4 is degenerately p-type in all environments despite its wide stability region, due to the presence of low-energy acceptor defects V Cu and Cu Hg and is resistant to extrinsic n-type doping. Meanwhile Hg 2 GeTe 4 has a narrow stability region and intrinsic behavior due to the relatively high formation energy of native defects, but presents an opportunity for bi-polar doping. While these two compounds have similar structure, bonding, and chemical constituents, the reciprocal nature of their dopability emerges from significant differences in band edge positions. A Brouwer band diagram approach is utilized to visualize the role of native defects on carrier concentrations, dopability, and transport properties. This study elucidates the doping asymmetry between two solid-solution forming DLS phases Cu 2 HgGeTe 4 and Hg 2 GeTe 4 by revealing the defect chemistry of each compound, and suggests design strategies for defect engineering of DLS phases.  more » « less
Award ID(s):
1729149 1729594
NSF-PAR ID:
10303610
Author(s) / Creator(s):
 ;  ;  ;  ;  ;  ;  ;  
Date Published:
Journal Name:
Journal of Materials Chemistry A
Volume:
9
Issue:
46
ISSN:
2050-7488
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
More Like this
  1. The optimization and application of new functional materials depends critically on our ability to manipulate the charge carrier density. Despite predictions of good n-type thermoelectric performance in the quaternary telluride diamond-like semiconductors ( e.g. Cu 2 HgGeTe 4 ), our prior experimental survey indicates that the materials exhibit degenerate p-type carrier densities (>10 20 h + cm −3 ) and resist extrinsic n-type doping. In this work, we apply the technique of phase boundary mapping to the Cu 2 HgGeTe 4 system. We begin by creating the quaternary phase diagram through a mixture of literature meta-analysis and experimental synthesis, discovering a new material (Hg 2 GeTe 4 ) in the process. We subsequently find that Hg 2 GeTe 4 and Cu 2 HgGeTe 4 share a full solid solution. An unusual affinity for Cu Hg and Hg Cu formation within Cu 2 HgGeTe 4 leads to a relatively complex phase diagram, rich with off-stoichiometry. Through subsequent probing of the fourteen pertinent composition-invariant points formed by the single-phase region, we achieve carrier density control ranging from degenerate (>10 21 h + cm −3 ) to non-degenerate (<10 17 h + cm −3 ) via manipulation of native defect formation. Furthermore, this work extends the concept of phase boundary mapping into the realm of solid solutions and clearly demonstrates the efficacy of the technique as a powerful experimental tool within complex systems. 
    more » « less
  2. Binary Co 4 Sb 12 skutterudite (also known as CoSb 3 ) has been extensively studied; however, its mixed-anion counterparts remain largely unexplored in terms of their phase stability and thermoelectric properties. In the search for complex anionic analogs of the binary skutterudite, we begin by investigating the Co 4 Sb 12 –Co 4 Sn 6 Te 6 pseudo-binary phase diagram. We observe no quaternary skutterudite phases and as such, focus our investigations on the ternary Co 4 Sn 6 Te 6 via experimental phase boundary mapping, transport measurements, and first-principles calculations. Phase boundary mapping using traditional bulk syntheses reveals that the Co 4 Sn 6 Te 6 exhibits electronic properties ranging from a degenerate p-type behavior to an intrinsic behavior. Under Sn-rich conditions, Hall measurements indicate degenerate p-type carrier concentrations and high hole mobility. The acceptor defect Sn Te , and donor defects Te Sn and Co i are the predominant defects and rationally correspond to regions of high Sn, Te, and Co, respectively. Consideration of the defect energetics indicates that p-type extrinsic doping is plausible; however, Sn Te is likely a killer defect that limits n-type dopability. We find that the hole carrier concentration in Co 4 Sn 6 Te 6 can be further optimized by extrinsic p-type doping under Sn-rich growth conditions. 
    more » « less
  3. Desirable phosphors for lighting, scintillation and composite films must have good light absorption properties, high concentration quenching, high quantum efficiency, a narrow color emission, and so forth. In this work, we first show that undoped yttrium hafnate Y 2 Hf 2 O 7 (YHO) nanoparticles (NPs) display dual blue and red bands after excitation using 330 nm light. Based on density functional theory (DFT) calculations, these two emission bands are correlated with the defect states arising in the band-gap region of YHO owing to the presence of neutral and charged oxygen defects. Once doped with Eu 3+ ions (YHOE), the YHO NPs show a bright red emission, a long excited state lifetime and stable color coordinates upon near-UV and X-ray excitation. Concentration quenching is active when Eu 3+ doping reaches 10 mol% with a critical distance of ∼4.43 Å. This phenomenon indicates a high Eu 3+ solubility within the YHO host and the absence of Eu 3+ clusters. More importantly, the optical performance of the YHOE NPs has been further improved by lithium co-doping. The origin of the emission, structural stability, and role of Li + -co-doping are explored both experimentally and theoretically. DFT calculation results demonstrate that Li + -co-doping increases the covalent character of the Eu 3+ –O 2− bonding in the EuO 8 polyhedra. Furthermore, the YHOE NPs have been dispersed into polyvinyl alcohol (PVA) to make transparent nanocomposite films, which show strong red emission under excitation at 270 and 393 nm. Overall, we demonstrate that the YHO NPs with Eu 3+ and (Eu 3+ /Li + ) doping have a high emission intensity and quantum efficiency under UV and X-ray excitation, which makes them suitable for use as phosphors, scintillators and transparent films for lighting, imaging and detection applications. 
    more » « less
  4. Germanium telluride is a high performing thermoelectric material that additionally serves as a base for alloys such as GeTe–AgSbTe 2 and GeTe–PbTe. Such performance motivates exploration of other GeTe alloys in order understand the impact of site substitution on electron and phonon transport. In this work, we consider the root causes of the high thermoelectric performance material Ge 1− x Mn x Te. Along this alloy line, the crystal structure, electronic band structure, and electron and phonon scattering all depend heavily on the Mn content. Structural analysis of special quasirandom alloy structures indicate the thermodynamic stability of the rock salt phase over the rhombohedral phase with increased Mn incorporation. Effective band structure calculations indicate band convergence, the emergence of new valence band maxima, and strong smearing at the band edge with increased Mn content in both phases. High temperature measurements on bulk polycrystalline samples show a reduction in hole mobility and a dramatic increase in effective mass with respect to increasing Mn content. In contrast, synthesis as a function of tellurium chemical potential does not significantly impact electronic properties. Thermal conductivity shows a minimum near the rhombohedral to cubic phase transition, while the Mn Ge point defect scattering is weak as indicated by the low K L dependence on the Ge–Mn fraction (Fig. 10). From this work, alloys near this phase transition show optimal performance due to low thermal conductivity, moderate effective mass, and low scattering rates compared to Mn-rich compositions. 
    more » « less
  5. Computations have predicted good thermoelectric performance for a number of Zintl phases when doped n-type. Combined with the successful experimental realization of n-type KGaSb 4 , KAlSb 4 , and Mg 3 Sb 2 with zT ≳ 1, this has fueled efforts to discover novel n-type dopable Zintl phases. However, a majority of Zintl phases exhibit strong proclivity toward p-type doping and prior successes in finding n-type dopable Zintls were largely serendipitous. Herein we use modern first-principles defect calculations to study trends in the dopability of Zintl pnictides and find that the average oxidation state of the anion is a useful chemical guide to identify novel n-type dopable phases. Specifically, we observe that Zintl pnictides with average oxidation of the anion near −1 are n-type dopable. The trend is mainly a consequence of the high formation energy of native acceptor defects ( e.g. cation vacancies) and the resulting absence of charge (electron) compensation. Using the oxidation state guide in conjunction with a descriptor of thermoelectric performance, we conduct a large-scale materials search and identify promising candidates that are n-type dopable. 
    more » « less