skip to main content


Title: Quantum cluster algorithm for data classification
Abstract

We present a quantum algorithm for data classification based on the nearest-neighbor learning algorithm. The classification algorithm is divided into two steps: Firstly, data in the same class is divided into smaller groups with sublabels assisting building boundaries between data with different labels. Secondly we construct a quantum circuit for classification that contains multi control gates. The algorithm is easy to implement and efficient in predicting the labels of test data. To illustrate the power and efficiency of this approach, we construct the phase transition diagram for the metal-insulator transition ofVO2, using limited trained experimental data, whereVO2is a typical strongly correlated electron materials, and the metallic-insulating phase transition has drawn much attention in condensed matter physics. Moreover, we demonstrate our algorithm on the classification of randomly generated data and the classification of entanglement for various Werner states, where the training sets can not be divided by a single curve, instead, more than one curves are required to separate them apart perfectly. Our preliminary result shows considerable potential for various classification problems, particularly for constructing different phases in materials.

 
more » « less
Award ID(s):
1955907
NSF-PAR ID:
10307989
Author(s) / Creator(s):
;
Publisher / Repository:
Springer Science + Business Media
Date Published:
Journal Name:
Materials Theory
Volume:
5
Issue:
1
ISSN:
2509-8012
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
More Like this
  1. Abstract

    Control over the concurrent occurrence of structural (monoclinic to tetragonal) and electrical (insulator to the conductor) transitions presents a formidable challenge for VO2-based thin film devices. Speed, lifetime, and reliability of these devices can be significantly improved by utilizing solely electrical transition while eliminating structural transition. We design a novel strain-stabilized isostructural VO2epitaxial thin-film system where the electrical transition occurs without any observable structural transition. The thin-film heterostructures with a completely relaxed NiO buffer layer have been synthesized allowing complete control over strains in VO2films. The strain trapping in VO2thin films occurs below a critical thickness by arresting the formation of misfit dislocations. We discover the structural pinning of the monoclinic phase in (10 ± 1 nm) epitaxial VO2films due to bandgap changes throughout the whole temperature regime as the insulator-to-metal transition occurs. Using density functional theory, we calculate that the strain in monoclinic structure reduces the difference between long and short V-V bond-lengths (ΔVV) in monoclinic structures which leads to a systematic decrease in the electronic bandgap of VO2. This decrease in bandgap is additionally attributed to ferromagnetic ordering in the monoclinic phase to facilitate a Mott insulator without going through the structural transition.

     
    more » « less
  2. Abstract

    Vanadium dioxide (VO2) is a well‐studied Mott‐insulator because of the very abrupt physical property switching during its semiconductor‐to‐metal transition (SMT) around 341 K (68 °C). In this work, through novel oxide‐metal nanocomposite designs (i.e., Au:VO2and Pt:VO2), a very broad range of SMT temperature tuning from323.5 to366.7 K has been achieved by varying the metallic secondary phase in the nanocomposites (i.e., Au:VO2and Pt:VO2thin films, respectively). More surprisingly, the SMTTccan be further lowered to301.8 K (near room temperature) by reducing the Au particle size from 11.7 to 1.7 nm. All the VO2nanocomposite thin films maintain superior phase transition performance, i.e., large transition amplitude, very sharp transition, and narrow width of thermal hysteresis. Correspondingly, a twofold variation of the complex dielectric function has been demonstrated in these metal‐VO2nanocomposites. The wide range physical property tuning is attributed to the band structure reconstruction at the metal‐VO2phase boundaries. This demonstration paved a novel approach for tuning the phase transition property of Mott‐insulating materials to near room temperature transition, which is important for sensors, electrical switches, smart windows, and actuators.

     
    more » « less
  3. Abstract

    Nitrogen vacancy (NV) centers, optically active atomic defects in diamond, have attracted tremendous interest for quantum sensing, network, and computing applications due to their excellent quantum coherence and remarkable versatility in a real, ambient environment. Taking advantage of these strengths, this paper reports on NV‐based local sensing of the electrically driven insulator‐to‐metal transition (IMT) in a proximal Mott insulator. The resistive switching properties of both pristine and ion‐irradiated VO2thin film devices are studied by performing optically detected NV electron spin resonance measurements. These measurements probe thelocaltemperature and magnetic field in electrically biased VO2devices, which are in agreement with theglobaltransport measurement results. In pristine devices, the electrically driven IMT proceeds through Joule heating up to the transition temperature while in ion‐irradiated devices, the transition occurs nonthermally, well below the transition temperature. The results provide direct evidence for nonthermal electrically induced IMT in a Mott insulator, highlighting the significant opportunities offered by NV quantum sensors in exploring nanoscale thermal and electrical behaviors in Mott materials.

     
    more » « less
  4. Abstract

    Phase change materials, which show different electrical characteristics across the phase transitions, have attracted considerable research attention for their potential electronic device applications. Materials with metal‐to‐insulator or charge density wave (CDW) transitions such as VO2and 1T‐TaS2have demonstrated voltage oscillations due to their robust bi‐state resistive switching behavior with some basic neuronal characteristics. BaTiS3is a small bandgap ternary chalcogenide that has recently reported the emergence of CDW order below 245 K. Here, the discovery of DC voltage / current‐induced reversible threshold switching in BaTiS3devices between a CDW phase and a room temperature semiconducting phase is reported. The resistive switching behavior is consistent with a Joule heating scheme and sustained voltage oscillations with a frequency of up to 1 kHz are demonstrated by leveraging the CDW phase transition and the associated negative differential resistance. Strategies of reducing channel sizes and improving thermal management may further improve the device's performance. The findings establish BaTiS3as a promising CDW material for future electronic device applications, especially for energy‐efficient neuromorphic computing.

     
    more » « less
  5. Abstract

    The emergence of spin‐orbit torques as a promising approach to energy‐efficient magnetic switching has generated large interest in material systems with easily and fully tunable spin‐orbit torques. Here, current‐induced spin‐orbit torques in VO2/NiFe heterostructures are investigated using spin‐torque ferromagnetic resonance, where the VO2layer undergoes a prominent insulator‐metal transition. A roughly twofold increase in the Gilbert damping parameter, α, with temperature is attributed to the change in the VO2/NiFe interface spin absorption across the VO2phase transition. More remarkably, a large modulation (±100%) and a sign change of the current‐induced spin‐orbit torque across the VO2phase transition suggest two competing spin‐orbit torque generating mechanisms. The bulk spin Hall effect in metallic VO2, corroborated by the first‐principles calculation of the spin Hall conductivity , is verified as the main source of the spin‐orbit torque in the metallic phase. The self‐induced/anomalous torque in NiFe, with opposite sign and a similar magnitude to the bulk spin Hall effect in metallic VO2, can be the other competing mechanism that dominates as temperature decreases. For applications, the strong tunability of the torque strength and direction opens a new route to tailor spin‐orbit torques of materials that undergo phase transitions for new device functionalities.

     
    more » « less