Electro-Thermal Investigation of GaN Vertical Trench MOSFETs (Journal Article) | NSF PAGES

skip to main content

The NSF Public Access Repository (NSF-PAR) system and access will be unavailable from 10:00 PM ET on Friday, March 24 until 8:00 AM ET on Saturday, March 25 due to maintenance. We apologize for the inconvenience.

Citation Details

Electro-Thermal Investigation of GaN Vertical Trench MOSFETs

Authors:: Chatterjee, Bikramjit; Ji, Dong; Agarwal, Anchal; Chan, Silvia H.; Chowdhury, Srabanti; Choi, Sukwon

Award ID(s):: 1934482

Publication Date:: 2021-05-01

NSF-PAR ID:: 10309988

Journal Name:: IEEE Electron Device Letters

Volume:: 42

Issue:: 5

ISSN:: 0741-3106

Sponsoring Org:: National Science Foundation

Free Publicly Accessible Full Text
Accepted Manuscript1.0
Publisher's Version of Record
https://doi.org/10.1109/LED.2021.3065362