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2. Platinum( ii ) alkyl complexes of chelating dibridgehead diphosphines P((CH ₂ ) _n ) ₃ P ( n = 14, 18, 22); facile cis / trans isomerizations interconverting gyroscope and parachute like adducts

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   Zhu, Yun ; Ehnbom, Andreas ; Fiedler, Tobias ; Shu, Yi ; Bhuvanesh, Nattamai ; Hall, Michael B. ; Gladysz, John A. ( September 2021 , Dalton Transactions)

   The gyroscope like dichloride complexes trans -Pt(Cl) 2 (P((CH 2 ) n ) 3 P) ( trans -2; n = c, 14; e, 18; g, 22) and MeLi (2 equiv.) react to yield the parachute like dimethyl complexes cis -Pt(Me) 2 (P((CH 2 ) n ) 3 P) ( cis -4c,e,g, 70–91%). HCl (1 equiv.) and cis -4c react to give cis -Pt(Cl)(Me)(P((CH 2 ) 14 ) 3 P) ( cis -5c, 83%), which upon stirring with silica gel or crystallization affords trans -5c (89%). Similar reactions of HCl and cis -4e,g give cis / trans -5e,g mixtures that upon stirring with silica gel yield trans -5e,g. A parallel sequence with trans -2c/EtLi gives cis -Pt(Et) 2 (P((CH 2 ) 14 ) 3 P) ( cis -6c, 85%) but subsequent reaction with HCl affords trans -Pt(Cl)(Et)(P((CH 2 ) 14 ) 3 P) ( trans -7c, 45%) directly. When previously reported cis -Pt(Ph) 2 (P((CH 2 ) 14 ) 3 P) is treated with HCl (1 equiv.), cis - and trans -Pt(Cl)(Ph)(P((CH 2 ) 14 ) 3 P) are isolated (44%, 29%), with the former converting to the latter at 100 °C. Reactions of trans -5c and LiBr or NaI affordmore »the halide complexes trans -Pt(X)(Me)(P((CH 2 ) 14 ) 3 P) ( trans -9c, 88%; trans -10c, 87%). Thermolyses and DFT calculations that include acyclic model compounds establish trans > cis stabilities for all except the dialkyl complexes, for which energies can be closely spaced. The σ donor strengths of the non-phosphine ligands are assigned key roles in the trends. The crystal structures of cis -4c, trans -5c, trans -7c, and trans -10c are determined and analyzed together with the computed structures.« less
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4. Reactivity of Cyclopentadienyl Molybdenum Compounds towards Formic Acid: Structural Characterization of CpMo(PMe ₃ )(CO) ₂ H, CpMo(PMe ₃ ) ₂ (CO)H, [CpMo(μ-O)(μ-O ₂ CH)] ₂ , and [Cp*Mo(μ-O)(μ-O ₂ CH)] ₂

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   Neary, Michelle C. ; Parkin, Gerard ( February 2017 , Inorganic Chemistry)
5. A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga ₂ O ₃ , Al ₂ O ₃ , In ₂ O ₃ , ZnO, SnO ₂ , CdO, NiO, CuO, and Sc ₂ O ₃

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   Spencer, Joseph A. ; Mock, Alyssa L. ; Jacobs, Alan G. ; Schubert, Mathias ; Zhang, Yuhao ; Tadjer, Marko J. ( March 2022 , Applied Physics Reviews)

   This Review highlights basic and transition metal conducting and semiconducting oxides. We discuss their material and electronic properties with an emphasis on the crystal, electronic, and band structures. The goal of this Review is to present a current compilation of material properties and to summarize possible uses and advantages in device applications. We discuss Ga 2 O 3 , Al 2 O 3 , In 2 O 3 , SnO 2 , ZnO, CdO, NiO, CuO, and Sc 2 O 3 . We outline the crystal structure of the oxides, and we present lattice parameters of the stable phases and a discussion of the metastable polymorphs. We highlight electrical properties such as bandgap energy, carrier mobility, effective carrier masses, dielectric constants, and electrical breakdown field. Based on literature availability, we review the temperature dependence of properties such as bandgap energy and carrier mobility among the oxides. Infrared and Raman modes are presented and discussed for each oxide providing insight into the phonon properties. The phonon properties also provide an explanation as to why some of the oxide parameters experience limitations due to phonon scattering such as carrier mobility. Thermal properties of interest include the coefficient of thermal expansion, Debye temperature,more »thermal diffusivity, specific heat, and thermal conductivity. Anisotropy is evident in the non-cubic oxides, and its impact on bandgap energy, carrier mobility, thermal conductivity, coefficient of thermal expansion, phonon modes, and carrier effective mass is discussed. Alloys, such as AlGaO, InGaO, (Al x In y Ga 1− x− y ) 2 O 3 , ZnGa 2 O 4 , ITO, and ScGaO, were included where relevant as they have the potential to allow for the improvement and alteration of certain properties. This Review provides a fundamental material perspective on the application space of semiconducting oxide-based devices in a variety of electronic and optoelectronic applications.« less