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Title: Molecular beam epitaxy for oxide electronics
The ability to synthesize new materials with unique functionalities has provided the foundation for modern electronics and for new discoveries. Oxide molecular beam epitaxy (MBE) has played a vital role in this endeavor. In this chapter, key fundamental concepts discussing the physics of complex oxides, followed by the important role of oxide MBE, are presented. Recent technical advances, current and potential challenges, and advantages of an oxide MBE are reviewed. Important factors responsible for electronic-quality oxide films – including of those metals that are difficult to oxidize – are discussed, with particular emphasis on new developments with radical-based MBE approaches. Taking analogy from III–V MBE, the current status and future prospects of oxide MBE are discussed in developing oxide electronics operating at room temperature.  more » « less
Award ID(s):
1420013
PAR ID:
10310102
Author(s) / Creator(s):
;
Date Published:
Journal Name:
Wiley series in materials for electronic and optoelectronic applications
ISSN:
1937-4003
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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