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Metal film over nanosphere (FON) substrates are a mainstay of surface‐enhanced Raman scattering (SERS) measurements because they are inexpensive to fabricate, have predictable enhancement factors, and are relatively robust. This work includes a systematic investigation of how the three major FON fabrication parameters—nanosphere size, deposited metal thickness, and metal choice—impact the resulting localized surface plasmon resonance (LSPR). With these three parameters, it is quite simple to fabricate FONs with an optimal LSPR for SERS experiments with various excitation wavelengths. Some SERS experiments require that the substrates be incubated in organic solvents that have the potential to damage the substrate; as such, this work also explores how solvent incubation impacts the physical and optical properties of the FON substrate. Although no significant increase in physical damage is obvious, the LSPR does shift significantly. Finally, these optimized FONs were employed for the sensing of an important allergen, soybean agglutinin. The FONs were modified with a glycopolymer that has affinity for soybean agglutinin and clear Raman bands demonstrate detection of 10 μg/ml soybean agglutinin. Overall, this work serves the dual purpose of both sharing critical details about FON design and demonstrating detection of an important lectin analyte.

 

Abstract Understanding the kinetics of interfacial reaction in the deposition of metal contacts on 2D materials is important for determining the level of contact tenability and the nature of the contact itself. Here, we find that some metals, when deposited onto layered black-arsenic films using e-beam evaporation, form a-few-nm thick distinct intermetallic layer and significantly change the nature of the metal contact. In the case of nickel, the intermetallic layer is Ni 11 As 8 , whereas in the cases of chromium and titanium they are CrAs and a-Ti 3 As, respectively, with their unique structural and electronic properties. We also find that temperature, which affects interatomic diffusion and interfacial reaction kinetics, can be used to control the thickness and crystallinity of the interfacial layer. In the field effect transistors with black-arsenic channel, due to the specifics of its formation, this interfacial layer introduces a second and more efficient edge-type charge transfer pathway from the metal into the black-arsenic. Such tunable interfacial metal contacts could provide new pathways for engineering highly efficient devices and device architectures.