An official website of the United States government
The growth of atomic layer deposited (ALD) Al2O3 on planar ZnSe substrates is studied using in situ spectroscopic ellipsometry. An untreated ZnSe surface requires an incubation period of 27 cycles of ALD Al2O3 before film growth is observed. Pretreating the surface with an ultraviolet generated ozone lowers the incubation to 17 cycles, whereas a plasma-enhanced ALD Al2O3 process can further lower the incubation period to 13 cycles. The use of ozone or plasma-activated oxygen species on ZnSe is found to create ZnO and SeO2, which are responsible for converting ZnSe from a hydrophobic to a hydrophilic surface. The interfacial layer between Al2O3 and ZnSe is mapped using high-resolution transmission electron microscopy and scanning transmission electron microscopy/energy dispersive spectroscopy. SeO2 is volatile and leaves a zinc-rich interface, which is 4.3 nm thick for the ultraviolet generated ozone pretreated sample and 2.5 nm for the plasma-enhanced ALD process.
more »
« less
Layer-by-Layer Pyramid Formation from Low-Energy Ar+ Bombardment and Annealing of Ge (110)
Isolated pyramids, 30–80 nm wide and 3–20 nm tall, form during sputter-annealing cycles on the Ge (110) surface. Pyramids have four walls with {19 13 1} faceting and a steep mound at the apex. We used scanning tunneling microscopy (STM) under ultrahigh vacuum conditions to periodically image the surface at ion energies between 100 eV and 500 eV and incremental total flux. Pyramids are seen using Ar+ between 200 eV and 400 eV, and require Ag to be present on the sample or sample holder. We suspect that the pyramids are initiated by Ag co-sputtered onto the surface. Growth of pyramids is due to the gathering of step edges with (16 × 2) reconstruction around the pyramid base during layer-by-layer removal of the substrate, and conversion to {19 13 1} faceting. The absence of pyramids using Ar+ energies above 400 eV is likely due to surface damage that is insufficiently annealed.
more »
« less
- PAR ID:
- 10310289
- Date Published:
- Journal Name:
- Nanomaterials
- Volume:
- 11
- Issue:
- 10
- ISSN:
- 2079-4991
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
-
-
Heat exchange between a solid material and the gas environment is critical for the heat dissipation of miniature electronic devices. In this aspect, existing experimental studies focus on non-porous structures such as solid thin films, nanotubes, and wires. In this work, the proposed two-layer model for the heat transfer coefficient (HTC) between a solid sample and the surrounding air is extended to 70-nm-thick nanoporous Si thin films that are patterned with periodic rectangular nanopores having feature sizes of 100–400 nm. The HTC values are extracted using the 3[Formula: see text] method based on AC self-heating of a suspended sample with better accuracy than steady-state measurements in some studies. The dominance of air conduction in the measured HTCs is confirmed by comparing measurements with varied sample orientations. The two-layer model, developed for nanotubes, is still found to be accurate when the nanoporous film is simply treated as a solid film in the HTC evaluation along with the radiative mean beam length as the characteristic length of the nanoporous film. This finding indicates the potential of increasing HTC by introducing ultra-fine nanoporous patterns, as guided by the two-layer model.more » « less
-
Chromium-doped SrTiO 3 nanocrystals of perovskite structure type and 45 nm (±15 nm) edge lengths were obtained by hydrothermal synthesis in water from titanium oxide, strontium hydroxide, and chromium( iii ) nitrate. According to XPS, the majority of the surface chromium (68.3%) is present in the 3+ state and the remainder (32.2%) in the 6+ state. Optical spectroscopy confirms a broad absorption at 2.3–2.9 eV from Cr(3+) dopant states, in addition to the 3.2 eV band edge of the SrTiO 3 host. After modification with Pt nanoparticles, Cr-doped SrTiO 3 nanocrystals catalyze photochemical H 2 evolution from aqueous methanol under visible light illumination (>400 nm) and with an apparent quantum yield of 0.66% at 435 nm. According to surface photovoltage spectroscopy (SPS), Cr-doped SrTiO 3 nanocrystals deposited onto gold substrates are n-type and have an effective band gap of 1.75 eV. SPS and transient illumination experiments at 2.50 eV reveal an anomalous surface photovoltage that increases with prior light exposure to values of up to −6.3 V. This photovoltage is assigned to ferroelectric polarization of the material in the space charge layer at the Au/SrTiO 3 :Cr interface. The polarization is stable for 24 h in vacuum but disappears after 12 h when samples are stored in air. The electric polarizability of SrTiO 3 :Cr is confirmed when films are exposed to static electric fields (1.20 MV m −1 ) in a fixed capacitor configuration. The discovery of a ferroelectric effect in Cr-doped SrTiO 3 could be significant for the development of improved photocatalysts for the conversion of solar energy into fuel.more » « less
-
We investigate the time evolution of ZnO thin film growth in oxygen plasma-enhanced atomic layer deposition using in situ spectroscopic ellipsometry. The recently proposed dynamic-dual-box-model approach [Kilic et al., Sci. Rep. 10, 10392 (2020)] is used to analyze the spectroscopic data post-growth. With the help of this model, we explore the in-cycle surface modifications and reveal the repetitive layer-by-layer growth and surface roughness modification mechanisms during the ZnO ultrathin film deposition. The in situ complex-valued dielectric function of the amorphous ZnO thin film is also determined from the model analysis for photon energies of 1.7–4 eV. The dielectric function is analyzed using a critical point model approach providing parameters for bandgap energy, amplitude, and broadening in addition to the index of refraction and extinction coefficient. The dynamic-dual-box-model analysis reveals the initial nucleation phase where the surface roughness changes due to nucleation and island growth prior to film coalescence, which then lead to the surface conformal layer-by-layer growth with constant surface roughness. The thickness evolution is resolved with Angstrom-scale resolution vs time. We propose this method for fast development of growth recipes from real-time in situ data analysis. We also present and discuss results from x-ray diffraction, x-ray photoelectron spectroscopy, and atomic force microscopy to examine crystallographic, chemical, and morphological characteristics of the ZnO film.more » « less
-
This work demonstrates an in situ etching technique for β-Ga2O3 using solid-source metallic gallium (Ga) in a low-pressure chemical vapor deposition (LPCVD) system, enabling clean, anisotropic, plasma damage-free etching. Etching behavior was systematically studied on (2¯01) β-Ga2O3 films and patterned (010) β-Ga2O3 substrates as a function of temperature (1000–1100 °C), Ar carrier gas flow (80–400 sccm) and Ga source-to-substrate distance (1–5 cm). The process exhibits vapor transport- and surface-reaction-limited behavior, with etch rates reaching a maximum of ∼2.25 µm/h on (010) substrates at 1050 °C and 2 cm spacing. Etch rates decrease sharply with increasing source-to-substrate distance due to reduced Ga vapor availability, while elevated temperatures enhance surface reaction kinetics through increased Ga reactivity and suboxide formation, leading to enhanced etch rates. In-plane anisotropy studies using radial trench patterns reveal that the (100) orientation produces the most stable etch front, characterized by smooth, vertical sidewalls and minimal lateral etching, consistent with its lowest surface free energy. In contrast, orientations such as (101), which possess higher surface energy, exhibit pronounced lateral etching and micro-faceting. As the trench orientation progressively deviates from (100), lateral etching increases. Facet evolution is observed between (100) and (1¯02), where stepped sidewalls composed of alternating (100) and (1¯02) segments progressively transition into a single inclined facet, which stabilizes along (100) or (1¯02) depending on the trench orientation. The (100)-aligned fins exhibit minimal bottom curvature, while (201)-aligned structures display increased under-etching and trench rounding. Collectively, these findings establish LPCVD-based in situ etching as a scalable, damage-free, and orientation-selective technique for fabricating high-aspect-ratio β-Ga2O3 3D structures in next-generation power devices.more » « less
- Free Publicly Accessible Full Text
-
Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.3390/nano11102521
