(Invited) How to Achieve Low Thermal Resistance and High Electrothermal Ruggedness in Ga 2 O 3 Devices?
- Award ID(s):
- 2100504
- NSF-PAR ID:
- 10312828
- Date Published:
- Journal Name:
- ECS Transactions
- Volume:
- 104
- Issue:
- 5
- ISSN:
- 1938-5862
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation