More Like this

1. Electron Transport Properties of AlxGa1−xN/GaN Transistors Based on First-Principles Calculations and Boltzmann-Equation Monte Carlo Simulations

   https://doi.org/10.1103/PhysRevApplied.11.044045  

   Fang, Jingtian ; Fischetti, Massimo V. ; Schrimpf, Ronald D. ; Reed, Robert A. ; Bellotti, Enrico ; Pantelides, Sokrates T. ( April 2019 , Physical Review Applied)
2. Defect Tolerance of Intersubband Transitions in Nonpolar GaN/(Al,Ga)N Heterostructures: A Path toward Low-Cost and Scalable Mid- to Far-Infrared Optoelectronics

   https://doi.org/10.1103/PhysRevApplied.16.054040  

   Monavarian, Morteza ; Xu, Jiaming ; Khoury, Michel ; Wu, Feng ; De Mierry, Philippe ; Vennegues, Philippe ; Belkin, Mikhail A. ; Speck, James S. ( November 2021 , Physical Review Applied)
3. Janus Pt XnY2−n ( X , Y = S , Se , Te ; 0≤n≤2 ) Monolayers for Enhanced Photocatalytic Water Splitting

   https://doi.org/10.1103/PhysRevApplied.13.064008  

   Ersan, F. ; Ataca, C. ( June 2020 , Physical Review Applied)

   null (Ed.)
4. Band Gap and Band Offset of Ga2O3 and (AlxGa1−x)2O3 Alloys

   https://doi.org/10.1103/PhysRevApplied.10.011003  

   Wang, Tianshi ; Li, Wei ; Ni, Chaoying ; Janotti, Anderson ( July 2018 , Physical Review Applied)
5. Strain and Composition Dependencies of the Near-Band-Gap Optical Transitions in Monoclinic (AlxGa1−x)2O3 Alloys with Coherent Biaxial In-Plane Strain on Ga2O3 (010)

   https://doi.org/10.1103/PhysRevApplied.18.064019  

   Korlacki, Rafał ; Hilfiker, Matthew ; Knudtson, Jenna ; Stokey, Megan ; Kilic, Ufuk ; Mauze, Akhil ; Zhang, Yuewei ; Speck, James ; Darakchieva, Vanya ; Schubert, Mathias ( December 2022 , Physical Review Applied)