The decay chains are observed, and the spin-parity of baryons is determined for the first time. The measurement is performed using proton-proton collision data at a center-of-mass energy of , corresponding to an integrated luminosity of , recorded by the LHCb experiment between 2016 and 2018. The spin-parity of the baryons is determined to be with a significance of more than ( ) compared to all other tested hypotheses. The up-down asymmetries of the transitions are measured to be ( ), consistent with maximal parity violation, where the first uncertainty is statistical and the second is systematic. These results support the hypothesis that the baryons correspond to the first -wave -mode excitation of the flavor triplet. © 2025 CERN, for the LHCb Collaboration2025CERN
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Low leakage current in heteroepitaxial Al0.7Sc0.3N ferroelectric films on GaN
Wurtzite ferroelectrics are attractive for microelectronics applications due to their chemical and structural compatibility with wurtzite semiconductors, such as and . However, the leakage current in epitaxial stacks reported to date should be reduced for reliable device operation. Here, we demonstrate low leakage current in epitaxial films on with well-saturated ferroelectric hysteresis loops that are orders of magnitude lower (i.e., 0.07 A ) than previously reported films (1–19 A ) having similar or better structural characteristics. We also show that, for these high-quality epitaxial films, structural quality (edge and screw dislocations), as measured by diffraction techniques, is not the dominant contributor to leakage. Instead, the small leakage in our films is limited by thermionic emission across the interfaces, which is distinct from the large leakage due to trap-mediated bulk transport in the previously reported films. To support this conclusion, we show that on lattice-matched buffers with improved structural characteristics but higher interface roughness exhibit increased leakage characteristics. This demonstration of low leakage current in heteroepitaxial films and understanding of the importance of interface barrier and surface roughness can guide further efforts toward improving the reliability of wurtzite ferroelectric devices. Published by the American Physical Society2025
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- Award ID(s):
- 2119281
- PAR ID:
- 10583614
- Publisher / Repository:
- American Physical Society
- Date Published:
- Journal Name:
- Physical Review Applied
- Volume:
- 23
- Issue:
- 1
- ISSN:
- 2331-7019
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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