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1. Janus $\mathrm{Pt}$ $X_n{Y}_{2-n}$ ( $X$ , $Y$ = $\mathrm{S}$ , $\mathrm{Se}$ , $\mathrm{Te}$ ; $0\le n\le 2$ ) Monolayers for Enhanced Photocatalytic Water Splitting

   https://doi.org/10.1103/PhysRevApplied.13.064008  

   Ersan, F.; Ataca, C. (June 2020, Physical Review Applied)

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2. Anisotropic Beer-Lambert law in $\beta$ - ${\mathrm{Ga}}_2{\mathrm{O}}_3$ : Polarization-dependent absorption and photoresponsivity spectra

   https://doi.org/10.1103/PhysRevApplied.21.054059  

   Adnan, Md_Mohsinur Rahman; Verma, Darpan; Sturm, Chris; Schubert, Mathias; Myers, Roberto C (May 2024, Physical Review Applied)
3. Low leakage current in heteroepitaxial ${\mathrm{Al}}_{0.7}{\mathrm{Sc}}_{0.3}\mathrm{N}$ ferroelectric films on $\mathrm{Ga}\mathrm{N}$

   https://doi.org/10.1103/PhysRevApplied.23.014036  

   Yazawa, Keisuke; Evans, Charles; Dickey, Elizabeth C; Tellekamp, M Brooks; Brennecka, Geoff L; Zakutayev, Andriy (January 2025, Physical Review Applied)

   Wurtzite $(\mathrm{Al},\mathrm{Sc})\mathrm{N}$ferroelectrics are attractive for microelectronics applications due to their chemical and structural compatibility with wurtzite semiconductors, such as $\mathrm{Ga}\mathrm{N}$and $(\mathrm{Al},\mathrm{Ga})\mathrm{N}$. However, the leakage current in epitaxial stacks reported to date should be reduced for reliable device operation. Here, we demonstrate low leakage current in epitaxial ${\mathrm{Al}}_{0.7}{\mathrm{Sc}}_{0.3}\mathrm{N}$films on $\mathrm{Ga}\mathrm{N}$with well-saturated ferroelectric hysteresis loops that are orders of magnitude lower (i.e., 0.07 A ${\mathrm{cm}}^{-2}$) than previously reported films (1–19 A ${\mathrm{cm}}^{-2}$) having similar or better structural characteristics. We also show that, for these high-quality epitaxial $(\mathrm{Al},\mathrm{Sc})\mathrm{N}$films, structural quality (edge and screw dislocations), as measured by diffraction techniques, is not the dominant contributor to leakage. Instead, the small leakage in our films is limited by thermionic emission across the interfaces, which is distinct from the large leakage due to trap-mediated bulk transport in the previously reported $(\mathrm{Al},\mathrm{Sc})\mathrm{N}$films. To support this conclusion, we show that ${\mathrm{Al}}_{0.7}{\mathrm{Sc}}_{0.3}\mathrm{N}$on lattice-matched ${\mathrm{In}}_{0.18}{\mathrm{Ga}}_{0.82}\mathrm{N}$buffers with improved structural characteristics but higher interface roughness exhibit increased leakage characteristics. This demonstration of low leakage current in heteroepitaxial $(\mathrm{Al},\mathrm{Sc})\mathrm{N}$films and understanding of the importance of interface barrier and surface roughness can guide further efforts toward improving the reliability of wurtzite ferroelectric devices. Published by the American Physical Society2025 

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4. Three-Dimensional Modeling of Minority-Carrier Lateral Diffusion Length Including Random Alloy Fluctuations in ( $\mathrm{In}$ , $\mathrm{Ga}$ ) $\mathrm{N}$ and ( $\mathrm{Al}$ , $\mathrm{Ga}$ ) $\mathrm{N}$ Single Quantum Wells

   https://doi.org/10.1103/PhysRevApplied.16.024054  

   Shen, Huan-Ting; Weisbuch, Claude; Speck, James S.; Wu, Yuh-Renn (August 2021, Physical Review Applied)
5. Disentangling superconductor and dielectric microwave losses in submicrometer $\mathrm{Nb}$ / $\mathrm{Si}\mathrm{O}$ ${}_2$ interconnects using a multimode microstrip resonator

   https://doi.org/10.1103/PhysRevApplied.21.024056  

   Garcia, Cougar_A T; Bailey, Nancyjane; Kirby, Chris; Strong, Joshua A; Talanov, Vladimir V; Herr, Anna Yu; Anlage, Steven M (February 2024, Physical Review Applied)

   An understanding of the origins of power loss in superconducting interconnects is essential for the energy efficiency and scalability of superconducting digital logic. At microwave frequencies, power dissipates in both the superconducting wires and the dielectric and these losses can be of comparable magnitude. We describe an approach to accurately disentangle such losses by exploiting their frequency dependence in a multimode transmission-line resonator. This is supported by the concept of a resonator geometric factor extracted from the Ansys High Frequency Structure Simulator (hfss), a commercial three-dimensional finite-element method (FEM) that we adopt for solving a superconductor interior. Using the technique, we have optimized a planarized fabrication process of reciprocal quantum logic (RQL) for the minimum interconnect loss at 4.2 K and gigahertz frequencies. The microstrip interconnects are composed of niobium (Nb) insulated by silicon dioxide (Si⁢O2) made from a tetraethoxysilane (TEOS) precursor. Two process generations use damascene fabrication and the third one uses Cloisonné fabrication. For all three, Si⁢O2 exhibits a dielectric loss tangent tan ⁡𝛿 =0.0012 ±0.0001, independent of the Nb wire width over 0.25–4 μ⁢m. The intrinsic microwave resistance 𝑅𝑠 of Nb varies with both the process and the wire width. For damascene fabrication, scanning transmission electron microscopy (STEM) and energy-dispersive x-ray spectroscopy (EDS) reveal that plasma oxidation and grain-growth orientation increase 𝑅𝑠 above the Bardeen-Cooper-Schrieffer (BCS) resistance 𝑅BCS ≈17 μ⁢Ω at 10 GHz. For Cloisonné fabrication, we demonstrate 𝑅𝑠 =13 ±1.4 μ⁢Ω down to 0.25 μ⁢m wire width, which is below 𝑅BCS and arguably the lowest microwave resistance reported for Nb at 4.2 K. 

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