skip to main content

Attention:

The NSF Public Access Repository (NSF-PAR) system and access will be unavailable from 5:00 PM ET until 11:00 PM ET on Friday, June 21 due to maintenance. We apologize for the inconvenience.


Title: Characterization of MOCVD-grown AlSiO gate dielectric on β-Ga 2 O 3 (001)
Award ID(s):
2043803
NSF-PAR ID:
10313919
Author(s) / Creator(s):
 ; ; ; ;
Date Published:
Journal Name:
Applied Physics Letters
Volume:
118
Issue:
17
ISSN:
0003-6951
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
More Like this
  1. Spontaneous Ge6O8cluster formation under ambient conditions using dispersion enhanced aryloxo ligands.

     
    more » « less