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Title: Characterization of MOCVD-grown AlSiO gate dielectric on β-Ga 2 O 3 (001)
Award ID(s):
2043803
PAR ID:
10313919
Author(s) / Creator(s):
 ; ; ; ;
Date Published:
Journal Name:
Applied Physics Letters
Volume:
118
Issue:
17
ISSN:
0003-6951
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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