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  • Improved operational reliability of MOCVD-grown AlSiO gate dielectric on β-Ga 2 O 3 (001) by post-metallization annealing
Title: Improved operational reliability of MOCVD-grown AlSiO gate dielectric on β-Ga 2 O 3 (001) by post-metallization annealing
Award ID(s):
2043803
PAR ID:
10313920
Author(s) / Creator(s):
; ; ; ;
Date Published:
Journal Name:
Semiconductor Science and Technology
Volume:
36
Issue:
9
ISSN:
0268-1242
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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